GaAs电介质表面对剥离电子通量分布影响的数值研究  

Numerical study of the effect of GaAs dielectric surface on the flux distribution of stripped electrons

作　　者：唐田田[1] 祝庆利 TANG Tian-Tian;ZHU Qing-Li(Department of Mathematical Physics Education,Yantai Nanshan University,Yantai 265713,China)

机构地区：[1]烟台南山学院数学物理教学部,烟台265713

出　　处：《原子与分子物理学报》2021年第5期104-110,共7页Journal of Atomic and Molecular Physics

摘　　要：利用半经典开轨道理论,研究了GaAs电介质表面对氢负离子在磁场中的光剥离干涉图样的作用,推导并计算了本体系下的光剥离电子流通量,主要研究GaAs电介质表面到离子的距离不同对电子通量的影响.结果表明,电介质表面到离子的距离可以改变电子通量分布中的振荡结构,影响探测平面上形成的干涉图样的分布.因此,可以通过改变电介质表面到离子的距离来调控剥离电子的通量和干涉图样分布.Based on semi-classical orbit theory,we studied the interference pattern of hydrogen ion in magnetic field and GaAs dielectric surface.Electrons flux is derived and calculated under this system.The effects of different distances between the GaAs dielectric surface and hydrogen ion on the electron flux were investigated.The results showed that different distances of the dielectric surface and ion can change the oscillation structure in the electron flux distribution,affecting the interference pattern distribution in the detected plane.Therefore,we can change the distance of dielectric surface and the ion to regulate electron flux distribution and interference pattern.

关 键 词：光剥离 开轨道理论 干涉图样 GaAs电介质表面 

分 类 号：O562.4[理学—原子与分子物理]