Reliability evaluation on sense-switch p-channel flash  

作　　者：Side Song Guozhu Liu Hailiang Zhang Lichao Chao Jinghe Wei Wei Zhao Genshen Hong Qi He 

机构地区：[1]The 58th Institution of Electronic Science and Technology Group Corporation of China,Wuxi 214035,China [2]School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China

出　　处：《Journal of Semiconductors》2021年第8期82-86,共5页半导体学报（英文版）

摘　　要：In this paper,the reliability of sense-switch p-channel flash is evaluated extensively.The endurance result indicates that the p-channel flash could be programmed and erased for more than 10000 cycles;the room temperature read stress shows negligible influence on the p-channel flash cell;high temperature data retention at 150℃ is extrapolated to be about 5 years and 53 years corresponding to 30% and 40% degradation in the drive current,respectively.Moreover,the electrical parameters of the p-channel flash at different operation temperature are found to be less affected.All the results above indicate that the sense-switch p-channel flash is suitable to be used as the configuration cell in flash-based FPGA.

关 键 词：RELIABILITY ENDURANCE data retention sense-switch p-channel flash 

分 类 号：TN791[电子电信—电路与系统] V243[航空宇航科学与技术—飞行器设计] V443