Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs  

作　　者：Changxi Chen Quan Wang Wei Li Qian Wang Chun Feng Lijuan Jiang Hongling Xiao Xiaoliang Wang 

机构地区：[1]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering and School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

出　　处：《Journal of Semiconductors》2021年第9期66-71,共6页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(2017YFB0402900);the National Natural Sciences Foundation of China(62074144).

摘　　要：In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliability of Al_(0.23)Ga_(0.77)N/GaN high electron mobility transistors(HEMTs).We found that the Poole-Frenkel(PF)emission is dominant in the reverse gate leakage current at the low reverse bias region(V_(th)<V_(G)<0 V)for the unannealed and annealed HEMTs.The emission barrier height of HEMT is increased from 0.139 to 0.256 eV after the PGA process,which results in a reduction of the reverse leakage current by more than one order.Besides,the reverse step stress was conducted to study the gate reliability of both HEMTs.After the stress,the unannealed HEMT shows a higher reverse leakage current due to the permanent damage of the Schottky gate.In contrast,the annealed HEMT shows a little change in reverse leakage current.This indicates that the PGA can reduce the reverse gate leakage and improve the gate reliability.

关 键 词：AlGaN/GaN HEMTs gate leakage PF emission post-gate annealing(PGA) 

分 类 号：TN386[电子电信—物理电子学]