具有不同Al组分的非极性a面p型AlGaN外延层的生长及特性研究  

Study on Growth and Properties of Non-polar a-plane p-AlGaN Epi-layers with Various Al Compositions

作　　者：张雄 范艾杰 崔一平 ZHANG Xiong;FAN Aijie;CUI Yiping(Advanced Photonics Center,School of Electronic Science&Engineering,Southeast University,Nanjing 210096,China)

机构地区：[1]东南大学电子科学与工程学院,先进光子学中心,江苏南京210096

出　　处：《安庆师范大学学报（自然科学版）》2021年第3期1-7,共7页Journal of Anqing Normal University(Natural Science Edition)

基　　金：国家自然科学基金重点项目(2018YFE0201000);国家自然科学基金面上项目(62005026,61804027);江苏省自然科学基金面上项目(BK20191027,BK20180359)。

摘　　要：利用金属有机物化学气相沉积(MOCVD)技术,在半极性r面蓝宝石衬底上成功生长了具有不同Al组分的非极性a面Mg-δ掺杂的p-AlGaN外延层。通过使用高分辨率X射线衍射仪、原子力显微镜和霍尔效应测试仪等表征方法,系统研究了Al组分从0到41%的非极性a面p-AlGaN外延层的结构与电学性质。特别针对具有较高Al组分的非极性a面p-AlGaN层的外延生长,创新性地研发了一种以金属有机源的流量脉冲供给为特征的MOCVD生长工艺。研究结果表明,在非极性a面p-AlGaN外延层的MOCVD生长过程中采用以金属有机源的流量脉冲供给为特征的MOCVD生长技术,可以显著提高非极性a面p-AlGaN外延层电导率。其中,利用该技术所生长的p-Al0.41Ga0.59N外延层样品的空穴浓度可高达7.0×10^(16)cm^(-3),为制备高发光效率的非极性a面AlGaN基紫外发光二极管打下了坚实的基础。The non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with various Al compositions were successfully grown on the semi-polar r-plane sapphire substrates with metal organic chemical vapor deposition(MOCVD)technology.The non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with the Al composition varied from 0 to 0.41 were systematically studied with scanning electron microscopy,high-resolution X-ray diffraction,atomic force microscopy,and Hall effect measurement.In particular,a novel MOCVD growth process featured with pulsed mass flow supply(PMFS)of the metal organicsource was developed for the epitaxial growth of the non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with various Al compositions.It was revealed that a significant enhancement in electrical conductivity was induced owing to the application of the newly-developed PMFS technique during the MOCVD growth process of the non-polar p-AlGaN epi-layers.A hole concentration as high as 7.0×10^(16)cm^(-3) was achieved for the p-Al0.41 Ga0.59 N epi-layer sample grown with the PMFS technique,which can be one of the crucial materials for manufacturing the non-polar a-plane AlGaN-based UV-LEDs.

关 键 词：脉冲流量供给 非极性a面p-AlGaN 镁掺杂 表面形态 电阻率 空穴浓度 

分 类 号：TN302.23[电子电信—物理电子学] TN304.054