自调节驱动对SiC MOSFET变换器性能的提升  

Improvement of SiC MOSFET based converters with self-regulating drive

作　　者：凌亚涛 赵争鸣[1] LING Yatao;ZHAO Zhengming(Department of Electrical Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]清华大学电机工程与应用电子技术系,北京100084

出　　处：《清华大学学报（自然科学版）》2021年第10期1079-1087,共9页Journal of Tsinghua University(Science and Technology)

基　　金：国家电网有限公司科技项目资助(SGHB0000KXJS1900586)。

摘　　要：主动栅极驱动(AGD)通过控制栅极侧来优化碳化硅MOSFET器件的开关特性,但是目前对AGD性能的研究一般仅限于双脉冲实验,无法充分说明AGD在变换器中的实际作用,也没有说明AGD可以长期连续运行。该文作者此前已提出了一种针对绝缘栅双极型晶体管(IGBT)的AGD方法,该文进一步研究了将所提方法用于碳化硅-金属氧化物半导体场效应晶体管(SiC MOSFET)时需要补偿的参数,并用双脉冲实验验证了其相对于常规驱动(CGD)和已有的AGD方法的性能优势。结果表明,相对CGD,所提方法可以降低开通延迟、开通损耗、关断延迟、关断损耗分别达53%、30%、65%、67%。搭建了Buck电路,将所提驱动方法应用到Buck电路,验证其带来的开关过冲、变换器效率等的改善。在过冲相同时,所提方法与CGD相比,可提升变换器效率达0.3%~1%。The active gate drive(AGD) method has been developed to optimize the SiC metal-oxide-semiconductor field-effect transistor(MOSFET) switching behavior by controlling the gate side. However, verification of current AGD methods has been limited to double-pulse tests, which fail to show practical values for AGD methods in converters and fail to show the AGD capabilities for continuous operations. The authors have presented an AGD method targeting insulted gate bipolar transistors(IGBTs). This paper ajusts this AGD method for SiC MOSFETs with parameter compensation. The accuracy of this modified AGD method is then compared with conventional gate drives(CGD) and existing AGD methods via double-pulse tests. In the double-pulse tests, this AGD method reduces the turn-on delay and its loss by 53% and 30%, and reduces the turn-off delay and its loss by 65% and 67%. This AGD method is then applied to a Buck converter to verify how it improves the switching spikes and converter efficiency. For a given spike, this AGD method improves the converter efficiency by 0.3% to 1% compared with the CGD method.

关 键 词：SiC MOSFET 开关非理想特性 主动栅极驱动(AGD) 变换器 

分 类 号：TM921.5[电气工程—电力电子与电力传动]