晶体硅/氧化钨背异质结太阳电池的制备及性能研究  

Preparation and performance study of crystalline silicon/tungsten oxide back heterojunction solar cell

作　　者：何涛 闫磊 吕文辉 王行柱 HE Tao;YAN Lei;LYU Wenhui;WANG Xingzhu(College of Physics and Optoelectronic Engineering,Xiangtan University,Xiangtan 411105,Hunan Province,China;Department of Applied Physics,Huzhou University,Huzhou 313000,Zhejiang Province,China)

机构地区：[1]湘潭大学物理与光电工程学院,湖南湘潭411105 [2]湖州师范学院理学院应用物理系,浙江湖州313000

出　　处：《电子元件与材料》2021年第9期852-856,共5页Electronic Components And Materials

基　　金：湖南省自然科学基金(2019JJ50603);湖州市科技计划(2018ZD2009,2019ZD2012,2019KT31)。

摘　　要：采用热蒸发法制备了n型晶体硅/氧化钨(WO_(x))异质结,并将其应用于背结太阳电池,研究了不同背电极对电池性能的影响及电池的变温性能。结果表明:相对于背铝电极,背银电极能够有效地提升电池的光电转换性能,最高光电转换效率达到了15.1%。结合Sun-Voc测试,证实通过降低电池串联电阻可使其光电转换效率提升至17.2%。电池的变温性能测试结果表明,其光电转换效率的温度系数为-0.35%/K,相比传统的铝背场晶体硅电池的温度系数降低22%。In this paper,the n-type crystalline silicon/tungsten oxide(WO_(x))heterojunction was prepared by thermal evaporation method and applied to the back junction solar cell.The effects of different back electrodes on the performance of the cells and the variable temperature performance of the cells were investigated.The results show that compared with the back aluminum electrode,the back silver electrode can effectively improve the photoelectric conversion performance of the cell,and the highest photoelectric conversion efficiency reaches 15.1%.Combined with the Sun-Voc test,it is confirmed that the photoelectric conversion efficiency can be increased to 17.2%by reducing the series resistance of the cell.Furthermore,the temperature-variable performance test of the cell shows that the temperature coefficient of its photoelectric conversion efficiency is-0.35%/K,which is 22%lower than that of the traditional aluminum back-field crystalline silicon cells.

关 键 词：晶体硅太阳电池 氧化钨薄膜 异质结 串联电阻 温度系数 

分 类 号：TN36[电子电信—物理电子学]