SiBCN高温薄膜温度传感器  

High Temperature Thin-Film Temperature Sensor Based on SiBCN

作　　者：李雅莉 徐毅 孙道恒 陈沁楠 方亮 海振银 崔在甫 李鑫 何功汉 崔金婷 Li Yali;Xu Yi;Sun Daoheng;Chen Qinnan;Fang Liang;Hai Zhenyin;Cui Zaifu;Li Xin;He Gonghan;Cui Jinting(Institute of Non-Silicon Micro-Nano Manufacturing Technology,Department of Mechanical and Electrical Engineering,School of Aerospace Engineering,Xiamen University,Xiamen 361102,China;624 Institute of China Academy of Aeronautics,Chengdu 610000,China;School of Mechanical and Electrical Engineering,Xiamen University Tan Kah Kee College,Xiamen 363105,China;College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学航空航天学院机电工程系非硅微纳系统制造技术研究所,福建厦门361102 [2]中国航空研究院624所,成都610000 [3]厦门大学嘉庚学院机电工程学院,福建厦门363105 [4]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《微纳电子技术》2021年第9期789-795,826,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金面上项目(51975498);中国航空发动机集团2018年产学研合作项目(HFZL2018CXY015-2);中国航发四川燃气涡轮研究院2020年对外委托项目(GJLZ-2020-0059)。

摘　　要：在氧化铝衬底上采用直写工艺制备SiBCN前驱体陶瓷薄膜温度传感器,通过扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)以及多通道数字采集仪对薄膜的形貌、结构及电学性能进行了表征,研究不同材料配比以及不同热解温度对薄膜传感性能的影响。结果表明:薄膜厚度对其表面质量影响较大,当厚度为8.1~13.3μm时,表面开始出现开裂现象,随着薄膜厚度增加,SiBCN陶瓷薄膜开裂问题更加严重;其电阻随着温度的升高显著降低,室温下阻值大于10 MΩ,温度升高为800℃时阻值为0.195 MΩ;随着TiB2纳米粉末比例增加,微观表面形貌开裂问题显著改善,且导电性越好;热解温度越高,薄膜导电性越强,但薄膜表面开裂情况越严重;多次温阻测试结果表明,温度传感器的重复性误差率为4.61%,验证了前驱体陶瓷在高温传感领域的可行性。A SiBCN ploymer derived ceramic thin-film temperature sensor was prepared on aluminum oxide substrate by direct writing process. The scanning electron microscope(SEM), energy disperse spectroscope(EDS), X-ray diffractometer(XRD) and multi-channel digital acquisition instrument were used to characterize the morphology, structure and electrical properties of the prepared thin film. The effects of different material proportions and pyrolysis temperatures on the thin film properties were studied. The results show that the thickness of the thin film has critical influence on the film surface quality. When the thickness of the thin film is 8.1-13.3 μm, the surface cracks begin to appear. With the increase of the thickness of the thin film, the cracking problem of the SiBCN ceramic thin film becomes more serious. The resistance decreases significantly with the increase of the temperature, the resistance is more than 10 MΩ at room temperature, but the resistance is 0.195 MΩ when the temperature is 800 ℃. As the proportion of TiB2 nano powders increases, the cracking of micro surface morphology is significantly improved, and the conductivity is better. The higher the pyrolysis temperature, the stronger the conductivity of the thin film, the more serious the surface cracking of the thin film. The repeated temperature-resistance test results show that the repeatability error rate of the temperature sensor is 4.61%, verifying the feasibility of the polymer derived ceramic in the field of high temperature sensing.

关 键 词：前驱体陶瓷 SiBCN陶瓷 温阻特性 温度传感器 高温热解 TiB2纳米粉末 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]