基于TRIZ的RAM存储器掉电保护电路的优化设计  

An Improved Power Failure Protection Circuit Design for RAM Memory Based on TRIZ Theory

作　　者：刘修泉 杨伟[1] 李艳红 Liu Xiuquan;Yang Wei;Li Yanhong(School of Mechanical and Electrical Engineering,Foshan Vocational and Technical College,FoShan,Guangdong 528137,China)

机构地区：[1]佛山职业技术学院机电工程学院,广东佛山528137

出　　处：《机电工程技术》2021年第8期127-130,共4页Mechanical & Electrical Engineering Technology

基　　金：教育部高等学校创新方法教学指导分委员会创新方法学科建设与研究专项规划项目(编号:20-2-9)。

摘　　要：为解决数控机床掉电重启后用户程数据丢失的问题,运用TRIZ方法对RAM存储器掉电保护电路系统进行了改进与优化设计。首先对RAM存储器掉电保护电路存在的问题进行了描述,采用功能分析、因果链分析对该初始问题进行了全面深入剖析,找出关键问题,然后利用物理矛盾和裁剪工具、物场模型和标准解建立3个解决方案模型,并对3个方案进行评估,将最优方案实施,数控机床掉电重启后用户程序数据不再丢失。利用TRIZ创新方法可以有效解决实际的工程问题,验证了方案优化设计可行性,为以后实际工程问题提供了一种新思路。In order to solve the problem of user program data loss after power failure and restart of NC machine tool, the RAM memory power failure protection circuit system was improved and optimized by using TRIZ method. Firstly, the engineering problem of the power down protection circuit of RAM memory was described, functional analysis and causal chain analysis were used to analyze the initial problem thoroughly, and the key problem was identified;then, three solutions were established by using physical contradiction and cutting tools, object field model and standard solution. Finally, the three schemes were evaluated and the optimal scheme was implemented. The user process data will no longer be lost when the NC machine was powered down and restarted. Practical engineering problems can effectively be solved by TRIZ innovation method, the feasibility of optimization design is verified. It provides a new idea for practical engineering problems in the future.

关 键 词：TRIZ 掉电保护 数据丢失 创新 

分 类 号：TG484[金属学及工艺—焊接]