抗高压动态导通电阻退化的高性能GaN功率开关器件研究  

Research on High-performance GaN Power Switching Device Resisting High-voltage Dynamic On-resistance Degradation

作　　者：覃孟 潘革生 QIN Meng;PAN Gesheng(Department of Mechanical and Electrical Engineering,Beihai Vocational College,Beihai 536000,China;School of Computer and Information Engineering,Nanning Normal University,Nanning 530001,China)

机构地区：[1]北海职业学院机电工程系,北海536000 [2]南宁师范大学计算机与信息工程学院,南宁530001

出　　处：《电源学报》2021年第5期158-164,共7页Journal of Power Supply

摘　　要：GaN功率开关器件界面态和缓冲层中深能级陷阱会导致高压电流坍塌和动态导通电阻退化。为提升高性能GaN功率开关器件抗高压性能,改善动态导通电阻退化能力,应采用极值性PEALD-AlN钝化技术设计高压状况下GaN功率开关器件,实现单片集成器件的目的,在去氧化层和氮化处理GaN功率开关器件表面后,采用高温LPCVD-SiNx钝化技术,使器件表面形成钝化层,抑制界面态导致的高压电流坍塌。同时,在高性能GaN功率开关器件电极附近注入磷离子,提升导通电阻性能,降低导通电阻退化速度。经过实验分析发现,经过极值性PEALD-AlN钝化后的GaN功率开关器件电流几乎无明显变化,在磷离子注入后,随着触发能量的变化,导通电阻变化较小,最小值达到3.16Ω/mm,即该方法能有效抗高压动态导通电阻退化。The interface state of GaN power switching devices and the deep-level traps in the buffer layer can cause high-voltage current collapse and dynamic on-resistance degradation.To improve the high-voltage resistance per-formance of GaN power switching devices and improve the dynamic on-resistance anti-degradation capability,the ex-treme PEALD-AlN passivation technology is used to design GaN power switching devices under high-voltage conditions,thus achieving monolithic integrated devices.After deoxidation and nitridation processing on the surface of GaN power switching devices,the high-temperature LPCVD-SiNx passivation technology is used to form a passivation layer on the surface to suppress the collapse of high-voltage current caused by the interface state.Meanwhile,phosphorus ions are implanted near the electrodes of the high-performance GaN power switching devices to improve the on-resistance perfor-mance and reduce the on-resistance degradation rate.Through experimental analysis,it was found that there was almost no significant change in the current of GaN power switching devices after passivation by the extreme PEALD-AlN.After the phosphorus ion implantation,the on-resistance changed little with the variation in the trigger energy,and the mini-mum value reached 3.16Ω/mm,indicating that the proposed method can effectively resist the degradation of high-volt-age dynamic on-resistance.

关 键 词：抗高压 动态导通电阻 高性能 功率开关器件 钝化技术 磷离子 

分 类 号：TN256[电子电信—物理电子学]