Al_(2)O_(3)忆阻器中氧空位对阻值转换性能的影响研究  

Investigation on the influence of oxygen vacancies to the resistive switching of memristors

作　　者：王剑宇 王立[1] WANG Jianyu;WANG Li(Department of Physics,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学物理学系,江西南昌330031

出　　处：《南昌大学学报（理科版）》2021年第3期229-232,共4页Journal of Nanchang University(Natural Science)

基　　金：国家自然科学基金青年项目(62005112)。

摘　　要：忆阻器能够在外加电压下实现高阻态与低阻态的转换,在存储器件及仿神经网络计算等方面有着重要的应用。本文通过在Si衬底上制备得到Pt-Al_(2)O_(3)-Pt的金属-绝缘层-金属结构的忆阻器器件,研究了氧空位对阻值转换性能的影响。利用原子层沉积技术工艺控制生长不同氧空位浓度的Al_(2)O_(3)薄膜,测量并比较其Ⅰ—Ⅴ循环曲线,发现仅有在氧空位浓度较高情况下忆阻器才能够实现在高阻态和低阻态之间的转换。本文实验结果表明氧空位对于实现阻值转换性能有着重要的影响,对生长制备忆阻器器件有着重要意义。Memristors can switch between high resistance state(HRS)and low resistance state(LRS)under external voltages,showing important application in memory and neural computing devices.Here,a Pt-Al_(2)O_(3)-Pt structured memristor device was fabricated on Si substrate,and the influence of oxygen vacancies was investigated.Al_(2)O_(3) film with different concentrations of oxygen vacancies was obtained by modulating the atomic layer deposition process,and the cyclicⅠ-Ⅴcurves were measured to investigate the resistive switching(RS)property.It is noted that only the memristor with a high concentration of oxygen vacancies can switch between HRS and LRS.The results show the significant importance of oxygen vacancies in the RS,which is important for the fabrication of memristor devices.

关 键 词：凝聚态物理 忆阻器 Al_(2)O_(3) 氧空位 

分 类 号：O4[理学—物理]