碲镉汞薄膜表面钝化的研究进展  

Research Progress of Surface Passivation of HgxCd1-xTe Films

作　　者：房诗玉 王雅荣 田志新 史继超 房永征 孙常鸿[2,3] 叶振华[2,3] 刘玉峰 FANG Shi-yu;WANG Ya-rong;TIAN Zhi-xin;SHI Ji-chao;FANG Yong-zheng;SUN Chang-hong;YE Zhen-hua;LIU Yu-feng(School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China;Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Devices,ChineseAcademy of Sciences,Shanghai 200083,China)

机构地区：[1]上海应用技术大学材料科学与工程学院,上海201418 [2]中国科学院上海技术物理研究所,上海200083 [3]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外》2021年第9期1-13,25,共14页Infrared

基　　金：中国科学院红外成像材料与器件重点实验室开放基金项目(IIMDKFJJ-19-01);上海市自然科学基金面上项目(20ZR1455400)。

摘　　要：赝二元体系碲镉汞(Mercury Cadmium Telluride,Hg_(x)Cd_(1-x)Te)材料具有优异的光电特性,是制备高灵敏度红外探测器的最重要材料之一。为了获得性能优异的Hg_(x)Cd_(1-x)Te探测器及其组件,目前已经发展了各种Hg_(x)Cd_(1-x)Te材料制备技术和器件制作工艺。但在各种材料制备及器件应用过程中,Hg_(x)Cd_(1-x)Te表面均会受到环境和不良表面效应的影响,所以需要采用先进的钝化工艺对其表面电荷态进行处理,改善材料表面的电学物理特性,从而实现器件探测性能的提升。因此,Hg_(x)Cd_(1-x)Te薄膜表面钝化工艺对Hg_(x)Cd_(1-x)Te红外探测器的性能提升至关重要。总结和分析了近年来碲镉汞薄膜表面钝化层的生长方法。按照本源钝化和非本源钝化进行了分类总结和综述,分析了不同钝化方法的优缺点,并对未来碲镉汞薄膜钝化工艺进行了展望。The pseudo-binary semiconductor material of mercury cadmium telluride(Hg_(x)Cd_(1-x)Te)has excellent electro-optical characteristics,which is one of the most important materials for the preparation of high-sensitivity infrared detectors.In order to enhance the performance of Hg_(x)Cd_(1-x)Te photodetectors,various Hg_(x)Cd_(1-x)Te material preparation technologies and device manufacturing processes have been developed.However,in the preparation of various materials and device applications,the surface of Hg_(x)Cd_(1-x)Te will be affected by the environment and adverse surface effects.It is necessary to use advanced passivation technology to process its surface charge state to improve the electrical and physical properties of the material surface,thereby realize the improvement of device detection performance.Therefore,the surface passivation process of the Hg_(x)Cd_(1-x)Te thin film is very important to the performance improvement of the Hg_(x)Cd_(1-x)Te infrared detector.The growth methods of the passivation layer on the surface of HgCdTe thin films in recent years are summarized and analyzed.According to the classification and summary of the original passivation and non-intrinsic passivation,the advantages and disadvantages of different passivation methods are analyzed,and the future HgCdTe thin film passivation process is prospected.

关 键 词：碲镉汞 红外探测器 表面钝化 

分 类 号：TN304[电子电信—物理电子学]