Resolving Deep Sub-Wavelength Scattering of Nanoscale Sidewalls Using Parametric Microscopy  

作　　者：Nagendra Parasad Yadav Ji-Chuan Xiong Wei-Ping Liu Wei-Ze Wang Yun Cao Ashish Kumar Xue-Feng Liu 

机构地区：[1]School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094 [2]School of Electrical and Electronics Information Technology,Hubei Polytechnic University,Huangshi 435003 [3]College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 401331 [4]School of Mechanical Engineering,Nanjing University of Science and Technology,Nanjing 210094

出　　处：《Journal of Electronic Science and Technology》2021年第3期233-242,共10页电子科技学刊（英文版）

基　　金：the National Major Scientific Instruments and Equipment Development Project under Grant No.61827814;the National Natural Science Foundation of China(NSFC)under Grant No.61501239;the NSFC International Young Scientist Research Fund under Grant No.61750110520;the Hubei Polytechnic University Laboratory Fund under Grant No.19XJK24R;the Jiangsu Postdoc Research Fund under Grant No.1601001B;the Beijing Natural Science Foundation under Grant No.Z190018;the Fundamental Research Funds for the Central Universities under Grant No.30920010011;the UK Engineering and Physical Sciences Research Council under Grant No.EP/R042578/1。

摘　　要：The quantitative optical measurement of deep sub-wavelength features with sub-nanometer sensitivity addresses the measurement challenge in the semiconductor fabrication process.Optical scatterings from the sidewalls of patterned devices reveal abundant structural and material information.We demonstrated a parametric indirect microscopic imaging(PIMI)technique that enables recovery of the profile of wavelength-scale objects with deep sub-wavelength resolution,based on measuring and filtering the variations of far-field scattering intensities when the illumination was modulated.The finite-difference time-domain(FDTD)numerical simulation was performed,and the experimental results were compared with atomic force microscopic(AFM)images to verify the resolution improvement achieved with PIMI.This work may provide a new approach to exploring the detailed structure and material properties of sidewalls and edges in semiconductor-patterned devices with enhanced contrast and resolution,compared with using the conventional optical microscopy,while retaining its advantage of a wide field of view and relatively low cost.

关 键 词：Light scattering nanoscale microscopy polarization SEMICONDUCTOR 

分 类 号：TB383.1[一般工业技术—材料科学与工程]