大功率780nm半导体激光器的设计与制备  

Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

作　　者：何林安 周坤 张亮[1,2] 李弋 杜维川[1,2] 胡耀[1,2] 高松信 唐淳[1,2] He Lin’an;Zhou Kun;Zhang Liang;Li Yi;Du Weichuan;Hu Yao;Gao Songxin;Tang Chun(The Key Laboratory of Science and Technology on High Energy Laser,CAEP,Mianyang 621900,China;Institute of Applied Electronics,CAEP,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院高能激光科学与技术重点实验室,四川绵阳621900 [2]中国工程物理研究院应用电子学研究所,四川绵阳621900

出　　处：《强激光与粒子束》2021年第9期1-5,共5页High Power Laser and Particle Beams

基　　金：科技部重点研发项目(2018YFB1107302)。

摘　　要：设计并制备了一款780 nm半导体激光器,并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层,采用GaAsP/GaInP作为量子阱/波导层有源区,限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术,在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤(COD),钝化后器件未发生COD现象,电流在10 A时输出功率10.1 W,电光转换效率54%。体布拉格光栅(VBG)外腔锁定前后,器件的光谱半峰全宽分别为2.6 nm和0.06 nm,VBG变温调控波长范围约230 pm。A short wavelength of 780 nm semiconductor laser has been designed and fabricated,and the mode locking by external cavity feedback has been studied.The epitaxial layers were prepared by the metal organic chemical vapor deposition technology.GaAsP and GaInP were used as the quantum well and waveguide layer,respectively.The confinement layers were AlGaInP material with low refractive index.Using the ultra-high vacuum cleavage and passivation technology,an amorphous ZnSe passivation layer was deposited on the laser cavity facets.For the original device the catastrophic optical damage(COD)occurred when the output power was 2.5 W.The ZnSe passivated device did not show COD phenomenon until 10.1 W.When the current was 10 A,the output power was 10.1 W,and the electro-optical conversion efficiency was 54%.Before and after the wavelength being locked by the volume Bragg grating(VBG),the full width at half maximum of the spectrum were 2.6 nm and 0.06 nm,respectively,and the wavelength range was about 230 pm through controlling the temperature of VBG.

关 键 词：半导体激光器 腔面灾变损伤 光谱调控 ZNSE 外腔反馈 

分 类 号：TN248.4[电子电信—物理电子学]