外加谐振电压时电容器的电容和电感  

Capacitance and Inductance of Capacitor Applied Resonant Voltage

作　　者：孙玉明[1] SUN Yu-ming(Department of Physics,School of Opto-Electronic Information Science and Ttechnology,Yantai University,Yantai 264005,China)

机构地区：[1]烟台大学光电信息科学技术学院,山东烟台264005

出　　处：《烟台大学学报（自然科学与工程版）》2021年第4期386-391,共6页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：国家自然科学基金资助项目(11774299)。

摘　　要：以圆柱形电磁谐振腔为基础设计了2种超导电荷量子位的门电容器,以期简化量子位的结构,有效减小电荷和磁通涨落的影响。从电磁场理论上得到了外加时谐电压驱动时有效激发的模式是横磁模,而且模式的径向分布函数是零阶的贝塞尔函数,纵向则为节点为偶数的驻波。这样的电磁场模式对应的等效电容与模的本征频率有关,而等效电感则是常数。这些结果将有利于实际门电容器设计、制作时尺寸参数的选择。Two kinds of gate capacitors in form of cylindrical cavity are designed for the superconducting charge qubit to sufficiently simplify the structure of qubit,and reduce the influence of the fluctuation of charge and flux.It is found that only specific transverse magnetic modes can be effectively excited,that is,their radial distribution function of field is characteristic of the zero order Bessel function.The equivalent capacitance of such modes are related to the eigenfrequency,while the equivalent inductance are constant.The results here will be helpful for the selection of size parameters in the design and fabrication of gate capacitors.

关 键 词：电容器 坡印廷定理 电阻抗 门电容器 

分 类 号：O441.4[理学—电磁学]