单晶α-氧化铝晶圆的研磨特性研究  

Grinding Characteristics of Single Crystalα-alumina Wafer

作　　者：孙书娟[1] 季业益[2] 陆宝山[2] 关集俱 SUN Shujuan;JI Yeyi;LU Baoshan;GUAN Jiju(Department of Rail Transit Engineering,Suzhou Institute of Construction and Communications,Suzhou Jiangsu 215103,China;Department of Precision Manufacturing Engineering,Suzhou Vocational Institute of Industrial Technology,Suzhou Jiangsu 215104,China)

机构地区：[1]苏州建设交通高等职业技术学校轨道交通工程系,江苏苏州215103 [2]苏州工业职业技术学院精密制造工程系,江苏苏州215104

出　　处：《机床与液压》2021年第18期51-54,共4页Machine Tool & Hydraulics

基　　金：国家自然科学基金青年科学基金项目(51805345);江苏省自然科学基金青年基金项目(BK20170373);江苏高校“青蓝工程”资助项目(2019)。

摘　　要：开发微孔陶瓷研磨装置,并制备GC磨料和C磨料研磨盘,分别对单晶α-氧化铝晶圆进行研磨加工试验。试验结果表明:与C磨料研磨盘相比,GC磨料研磨盘对单晶α-氧化铝晶圆的研磨效果更佳;使用GC磨料研磨盘研磨10 min后,晶圆材料去除率为1.05~1.15μm/min,表面粗糙度Sa达15~16 nm;在研磨40~50 min时,研磨盘的研磨效率下降,晶圆材料去除率增加至1.4~1.5μm/min,但表面粗糙度Sa仅提高至15.5~16.5 nm。尽管如此,在保证表面加工质量的前提下,晶圆的材料去除率仍能达到1μm/min以上的工业加工标准,表明所开发的微孔陶瓷研磨装置能够较好地满足单晶α-氧化铝晶圆的研磨加工要求。The microporous ceramic grinding device was developed,and GC abrasive and C abrasive grinding discs were respectively prepared to grind single crystalα-alumina wafer.The experimental results show that the GC abrasive grinding disc has better grinding effect on single crystalα-alumina wafer than the C abrasive grinding disc;the removal rate of wafer material is 1.05~1.15μm/min,surface roughness Sa is 15~16 nm after 10 minutes grinding with GC abrasive grinding disc;when grinding 40~50 minutes,the grinding efficiency of GC abrasive grinding disc decreases,and the removal rate of wafer material increases to 1.4~1.5μm/min,but the surface roughness Sa only increases to 15.5~16.5 nm.Nevertheless,under the premise of ensuring the quality of surface processing,the material removal rate of wafers can still reach the industrial processing standards of more than 1μm/min.It shows that the developed microporous ceramic grinding device can better meet the grinding requirements of single crystalα-alumina wafers.

关 键 词：陶瓷研磨装置 GC/C磨料研磨盘 单晶α-氧化铝晶圆 研磨特性 

分 类 号：TG580.68[金属学及工艺—金属切削加工及机床]