基于降低有机场效应晶体管泄漏电流的研究进展  

Research Progress on Reducing Leakage Current of Organic Field-Effect Transistors

作　　者：林雪梅 李蒙蒙 龙世兵 李泠[2] Lin Xuemei;Li Mengmeng;Long Shibing;Li Ling(School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学技术大学微电子学院,合肥230026 [2]中国科学院,微电子研究所,微电子器件与集成技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《半导体技术》2021年第9期665-674,共10页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2019YFA0706100);国家自然科学基金面上项目(62074163)。

摘　　要：近年来,由于有机场效应晶体管(OFET)具有成本低、机械柔性优异且可大面积制备等优点成为国际研究的前沿领域之一。迄今为止,OFET的载流子迁移率已超过了非晶硅薄膜晶体管,在柔性集成电路中表现出了巨大的应用潜力。随着技术的不断改进,OFET的工作频率不断提高。首先阐述了泄漏电流的来源;然后介绍了影响OFET静态功耗的最主要因素是栅极泄漏电流,总结了近年来降低OFET栅极泄漏电流的主要方法,如构建多层结构的栅介质、开发新型栅介质材料和交联栅介质材料;最后对降低OFET泄漏电流的方法进行了展望。In recent years, with the advantages of low cost, excellent mechanical flexibility and large-area fabrication, organic field-effect transistor(OFET) has become one of the frontier fields of international research.So far, the carrier mobility of OFETs has surpassed that of amorphous silicon thin film transistors, showing great application potential in flexible integrated circuits.With the continuous improvement of technology, the operating frequency of OFETs is constantly increasing.Firstly, the source of the leakage current is introduced.Then, it is introduced that the most important factor affecting the static power consumption of OFETs is the gate leakage current.The main methods to reduce the gate leakage current of OFETs in recent years are summarized, such as building multi-layer gate dielectrics, developing new gate dielectric materials and cross-linking gate dielectric materials.Finally, the methods to reduce the leakage current of OFETs are prospected.

关 键 词：有机场效应晶体管(OFET) 静态功耗 泄漏电流 栅介质层 界面工程 

分 类 号：TN386[电子电信—物理电子学]