1550nm大功率低噪声分布反馈激光器芯片设计  

Design of High-Power Low-Noise 1 550 nm Distributed Feedback Laser Chip

作　　者：武艳青 车相辉[1] 张磊[2] 赵润[1] 曹晨涛 董风鑫 Wu Yanqing;Che Xianghui;Zhang Lei;Zhao Run;Cao Chentao;Dong Fengxin(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Shijiazhuang Mechanical Vocational School,Shijiazhuang 050061,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]石家庄市机械技工学校,石家庄050061

出　　处：《半导体技术》2021年第9期705-711,共7页Semiconductor Technology

摘　　要：设计了一种1 550 nm波长分布反馈(DFB)激光器芯片,分析了有源区材料和波导结构对芯片参数的影响。分析了影响输出功率和相对强度噪声(RIN)的因素,并进行了实验对比。通过对芯片材料结构和波导结构的优化设计提升了芯片效率、降低了RIN;通过优化腔长与量子阱总增益之间的匹配参量及对光波导的优化设计,提高了芯片注入饱和点;通过提升注入水平提高了芯片输出功率。芯片测试结果显示,25℃时阈值电流为13 mA,斜率效率为0.38 W/A,输出功率为102 mW@300 mA,边模抑制比为51 dB@50 mW,RIN为-160 dB/Hz@300 mA。该芯片具备高输出功率、低RIN、低阈值电流、高斜率效率的特点。A 1 550 nm wavelength distributed feedback(DFB) laser chip was designed. The influences of the material in the active region and waveguide structures on chip parameters were analyzed. The factors affecting the output power and relative intensity noise(RIN)were analyzed and compared experimentally. Through the optimization design of chip material structure and waveguide structure, the chip efficiency was improved and the RIN was reduced. By optimizing the matching parameters between the cavity length and the total gain of the quantum well and the optimal design of optical waveguide, the injection saturation point of the chip was increased. The output power of the chip was improved by increasing the injection level. The test results of the chip show that the threshold current is 13 mA at 25 ℃,the slope efficiency is 0.38 W/A,the output power is 102 mW@300 mA, the side-mode suppression ratio is 51 dB@50 mW,and the RIN is-160 dB/Hz@300 mA. The chip has the characteristics of high output power, low RIN, low threshold current and high slope efficiency.

关 键 词：分布反馈(DFB) 波导结构 注入水平 高功率 低相对强度噪声(RIN) 

分 类 号：TN248.4[电子电信—物理电子学]