新型双层外延水平沟道恒流二极管结构的优化研究  

Optimization of the Structure of a Novel Double Layer Epitaxial Horizontal Channel Current Regulative Diode

作　　者：马飞[1] 贵向泉[2] MA Fei;GUI Xiangquan(School of Electromechanical and Information Engineering,Wuxi Vocational Institute of Arts&Technology,YLring,Jiangsu,214206,CHN;School of Computer a?id Communication A-anzhou University of Technology,Lanzhou,730050,CHN)

机构地区：[1]无锡工艺职业技术学院机电与信息工程学院,江苏宜兴214206 [2]兰州理工大学,计算机与通信学院,兰州730050

出　　处：《固体电子学研究与进展》2021年第4期258-263,273,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61862040);全国轻工职业教育教学指导委员会年度课题(QGHZW2019073)。

摘　　要：利用Silvaco-TCAD半导体器件仿真软件研究了恒流二极管水平沟道结构对器件恒流值(IH)、夹断电压(VP)、阻断电压(VR)及恒流值温度稳定性的影响。提出了一种新型双层外延水平沟道恒流二极管器件结构,降低了沟道两侧峰值电场强度。研制出的样品的电参数和温度稳定性得到了改善。The effects of the horizontal channel structure of current regulative diode on the constant current value(IH),clamping voltage(VP),blocking voltage(VR)and temperature stability of constant-current value of the device were studied by using Silvaco-TCAD semiconductor device simulation software.A novel double-layer epitaxial current regulative diode device is proposed to reduce the peak electric field intensity on both sides of the channel.The electrical parameters and temperature stability of the prepared samples are improved.

关 键 词：恒流二极管 沟道结构 双层外延 结构设计 工艺优化 

分 类 号：TN303[电子电信—物理电子学]