High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics  

作　　者：Chengli Wang Zhiwei Fang Ailun Yi Bingcheng Yang Zhe Wang Liping Zhou Chen Shen Yifan Zhu Yuan Zhou Rui Bao Zhongxu Li Yang Chen Kai Huang Jiaxiang Zhang Ya Cheng Xin Ou 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,200050 Shanghai,China. [2]The Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China [3]The Extreme Optoelearomechanics Laboratory(XXL),School of Physics and Electronic Science,East China Normal University,200241 Shanghai,China. [4]State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,201800 Shanghai,China

出　　处：《Light(Science & Applications)》2021年第8期1474-1484,共11页光（科学与应用)（英文版）

基　　金：National Key R&D Program of China(2017YFE0131300,2019YFA0705000);National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,11705262,11905282,12004116,12074400,and 11734009);Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032);Chinese-Austrian Cooperative R&D Project(No.GJHZ201950);Program of Shanghai Academic Research Leader(19XD1404600);Shanghai Sailing Program(No.19YF1456200,19YF1456400);K.C.Wong Education Foundation(GJTD-2019-11).

摘　　要：The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies.Here,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of resonances.Using these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been observed.Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our knowledge.Meanwhile,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to 1700nm.Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

关 键 词：resonator CARBIDE NONLINEAR 

分 类 号：O43[机械工程—光学工程]