Vertical‐organic‐nanocrystal‐arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing  

作　　者：Fangxu Yang Lingjie Sun Qingxi Duan Huanli Dong Zhaokun Jing Yuchao Yang Rongjin Li Xiaotao Zhang Wenping Hu Leon Chua 

机构地区：[1]Key Laboratory of Molecular Optoelectronic Sciences,School of Science,Tianjin University,Tianjin,China [2]Beijing National Research Center for Molecular Sciences,Chinese Academy of Sciences,Beijing,China [3]Joint School of National University of Singapore and Tianjin University,International Campus of Tianjin University,Binhai New City,Fuzhou,China [4]Key Laboratory of Microelectronic Devices and Circuits(MOE),Institute of Microelectronics,Peking University,Beijing,China [5]Department of Electrical Engineering and Computer Sciences,University of California,Berkeley,California,USA

出　　处：《SmartMat》2021年第1期99-108,共10页智能材料（英文）

基　　金：China Postdoctoral Science Foundation,Grant/Award Number:2019T120183;Beijing NOVA Programme,Grant/Award Number:Z131101000413038;Chinese Academy of Sciences,Grant/Award Number:XDB12030300;Ministry of Science and Technology of China,Grant/Award Number:2017YFA0204503;Beijing Local College Innovation Team Improve Plan,Grant/Award Number:IDHT20140512;National Natural Science Foundation of China,Grant/Award Numbers:91833306,51903186,21875158。

摘　　要：Memristors proposed by Leon Chua provide a new type of memory device for novel neuromorphic computing applications.However,the approaching of distinct multi‐intermediate states for tunable switching dynamics,the con-trolling of conducting filaments(CFs)toward high device repeatability and reproducibility,and the ability for large‐scale preparation devices,remain full of challenges.Here,we show that vertical‐organic‐nanocrystal‐arrays(VONAs)could make a way toward the challenges.The perfect one‐dimensional structure of the VONAs could confine the CFs accurately with fine‐tune resistance states in a broad range of 103 ratios.The availability of large‐area VONAs makes the fabrication of large‐area crossbar memristor arrays facilely,and the analog switching characteristic of the memristors is to effectively imitate different kinds of synaptic plasticity,indicating their great potential in future applications.

关 键 词：conducting filament MEMRISTOR organic electronics organic single crystal 

分 类 号：TB3[一般工业技术—材料科学与工程]