用于关断耗尽型GaN器件的Buck-Boost负压电路  

A Buck-Boost Negative Voltage Circuit for Turning-Off Depletion-Mode GaN Devices

作　　者：许齐飞 毛帅 冯旭东 明鑫[1] 张波[1] XU Qifei;MAO Shuai;FENG Xudong;MING Xin;ZHANG Bo(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2021年第4期487-493,共7页Microelectronics

基　　金：国家重点研发计划资助项目(2017YFB0402800);国家自然科学基金资助项目(61974019)。

摘　　要：设计了一种Buck-Boost负压关断电平产生电路。通过引入动态调整关断时间的计时模块、分段电流限模块和纹波高速检测模块,实现了在耗尽型GaN器件快速开关时稳定栅极负压的供给,有效消除了耗尽型GaN器件在高压应用时密勒误开启现象的发生。电路基于0.35μm BCD工艺进行设计与仿真验证。结果表明,该电路在宽输入范围内稳定输出-14 V的负压,在20~130 mA恒定负载电流下工作效率达80~87%,在0.5~1 MHz的工作频率下GaN器件栅极开关切换期间输出电压依然稳定。该电路满足高压应用需求。A buck-boost negative shutdown voltage generation circuit was designed.By introducing a dynamically adjustable off-time timing module,a segmented current-limit module and a ripple based high speed detection module,a stable negative gate voltage supply was achieved during the fast switching of depleted GaN devices,which effectively eliminated the occurrence of Miller open when depletion-mode GaN devices were used in high-voltage applications.The circuit was designed and simulated in a 0.35μm BCD process.The results showed that the circuit could output stably a negative voltage of-14 V in a wide input range,the operating efficiency could reach 80%~87%under 20~130 mA constant load current.The output voltage of GaN device kept stable during gate switches switching at 0.5~1 MHz operating frequency.This circuit met the needs of high voltage applications.

关 键 词：耗尽型GaN BUCK-BOOST变换器 恒定导通时间 高速比较器 

分 类 号：TM46[电气工程—电器] TN86[电子电信—信息与通信工程]