一种静电保护用低触发电压PMTSCR器件  

A New PMTSCR Device with Low Trigger Voltage for Electrostatic Discharge Protection

作　　者：廖昌俊 黄秋培 何明昊 王鑫[2] 郑童文 刘继芝[2] LIAO Changjun;HUANG Qiupei;HE Minghao;WANG Xin;ZHENG Tongwen;LIU Jizhi(School of Inform.and Commun.Engineer.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610000,P.R.China;School of Electronic Science and Engineering,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学信息与通信工程学院,成都610000 [2]电子科技大学电子科学与工程学院,成都610000

出　　处：《微电子学》2021年第4期587-591,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61671120)。

摘　　要：提出了一种用于静电放电(ESD)保护的PMOS器件触发SCR器件(PMTSCR)。PMTSCR器件的开启由寄生PMOS的沟道长度、SCR器件寄生阱电阻RPW和RNW决定。器件具有触发电压低的优点。实验结果表明,通过调整PMTSCR器件的结构参数,相比于传统低电压触发SCR器件(LVTSCR),PMTSCR器件的触发电压由6.3 V下降到4.4 V,触发电压减少30%,同时器件的ESD漏电流保持不变。A new PMOS device trigger SCR device(PMTSCR) was proposed to reduce the trigger voltage for electrostatic discharge(ESD) protection. The turn-on of the PMTSCR device was determined by the channel length of the parasitic PMOS and the parasitic well resistances RPW and RNW of the SCR device. The device featured low trigger voltage. The experimental results showed that the trigger voltage of the PMTSCR device reduced from 6.3 V to 4.4 V, and was 30% less than that of the traditional low voltage trigger SCR device(LVTSCR), while the ESD leakage current of the device remained unchanged.

关 键 词：静电放点 可控硅整流器 触发电压 

分 类 号：TN335[电子电信—物理电子学] TN34