对称矩形环栅NMOS器件的建模与验证  

Modeling and Verification of a Symmetrical Square Enclosed Layout Transistor NMOS Device

作　　者：蒋鹏凯 罗萍[1] 吴昱操 凌荣勋 JIANG Pengkai;LUO Ping;WU Yucao;LING Rongxun(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2021年第4期598-602,共5页Microelectronics

基　　金：预研项目(1126190601A)。

摘　　要：介绍了一种对称矩形环栅NMOS器件结构,并对其等效宽长比的计算模型和总剂量效应加固性能进行了研究。通过区域划分、保角变换等方法,对该对称矩形环栅NMOS器件进行建模,给出了其等效宽长比的计算模型。在0.18μm BCD工艺下进行流片,并对不同尺寸下直栅MOS器件和环栅MOS器件进行辐照对比测试。测试结果表明,对称矩形环栅NMOS器件的等效宽长比计算模型的计算误差可低至5%。辐照总剂量10 kGy条件下,对称矩形环栅NMOS器件的关态泄漏电流仍可维持在一个很低的量级,表现出良好的总剂量效应加固性能。A symmetrical square enclosed layout transistor(SS-ELT) NMOS device structure was introduced. Equivalent aspect ratio W/L model and total ionizing dose(TID) radiation-hard performance of the SS-ELT NMOS were also studied. Based on regional decomposition and conformal mapping, et al., the model of equivalent aspect ratio W/L was derived. The chips were fabricated in a 0.18 μm BCD process. Both standard NMOS and SS-ELT NMOS with different sizes were tested under irradiated environment and non-irradiated environment. The tested results showed that the percentage error of equivalent aspect ratio W/L model of the SS-ELT NMOS could be as low as 5%. Under the condition of 10 kGy TID, the off-state leakage current of the SS-ELT NMOS could still be maintained at a very low level, which reflected its great TID tolerance.

关 键 词：总剂量效应加固 对称矩形环栅 等效宽长比计算模型 

分 类 号：TN386[电子电信—物理电子学]