伽马辐照对量子点嵌入式HEMT力敏结构的影响  

Effect of Gamma radiation on quantum dot embedded HEMT force-sensitive structure

作　　者：王瑞荣[1,2] 郭浩[1] 唐军[1] 刘金萍[1] 刘丽双 WANG Ruirong;GUO Hao;TANG Jun;LIU Jinping;LIU Lishuang(Key Laboratory of Instrumentation Science and Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051,China;Department of Electronic Engineering,Taiyuan Institute of Technology,Taiyuan 030008,China)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051 [2]太原工业学院电子工程系,山西太原030008

出　　处：《传感器与微系统》2021年第10期21-23,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金面上资助项目(51775522);山西省量子传感与精密测量重点实验室项目(201905D121001);山西省高等学校科技创新项目(2020L0638)。

摘　　要：辐射对空间通信系统中使用的传感器件的不利影响是需要重点考虑的问题,作为力学传感器件的核心部件,对力敏传感单元的抗辐照特性的研究就尤为重要。设计了一种InAs量子点(QD)嵌入式高电子迁移率晶体管(HEMT)力敏结构,通过^(60)Co-γ射线对InAs QD-HEMT结构进行了不同剂量的辐照,并对辐照前后结构的电学特性、力敏特性进行了测试分析。实验结果表明:随着辐照剂量的增加,InAs QD-HEMT结构的电学特性发生退化,灵敏度不断降低。经过150 Mrad剂量辐照后InAs QD-HEMT结构的漏极电流降低了约21%,灵敏度降低了63.4%。结果表明:高剂量辐照后InAs QD-HEMT结构仍具有工作性能,为MEMS传感器应用于强辐照环境提供研究基础。The adverse effects of radiation on sensing devices used in space communication systems need to be considered.As the core component of mechanical sensing devices,the research on the anti-radiation characteristics of force-sensitive units is particularly important.The InAs quantum dot(QD)embedded in high electron mobility transistor(HEMT)for force-sensitive structure is designed.The output characteristics,and force-sensitivity characteristic of InAs QD-HEMT structure are analyzed by ^(60)Co-γray with varied radiation doses.The experiment results indicate that the electrical properties of InAs QD-HEMT degrades,and the sensitivity is decreased by the increase of irradiation dose.The drain current of InAs QD-HEMT reduces about 21%and the sensitivity decreases about 63.4%after irradiated with a dose of 150 MRad.The results show that the InAs QD-HEMT structure still has working performance after high dose irradiation,which provides a research basis for MEMS sensors to be used in serious irradiation environment.

关 键 词：伽马辐照 InAs量子点—高迁移率晶体管 力敏特性 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN386[自动化与计算机技术—控制科学与工程]