GaSb-based type-Ⅰ quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers  

作　　者：Yi Zhang Cheng-Ao Yang Jin-Ming Shang Yi-Hang Chen Tian-Fang Wang Yu Zhang Ying-Qiang Xu Bing Li Zhi-Chuan Niu 张一;杨成奥;尚金铭;陈益航;王天放;张宇;徐应强;刘冰;牛智川(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductor,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductor,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Chinese Physics B》2021年第9期231-234,共4页中国物理B（英文版）

基　　金：Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790581);the Key Area Research and Development Program of Guangdong Province,China(Grant No.2020B0303020001).

摘　　要：We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper.And the quantum well cascade laser with 100-μm-wide,2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature.The characteristic temperature T_(0) is estimated at above 60 K.

关 键 词：ANTIMONY quantum well cascade diode laser molecular beam epitaxy 

分 类 号：TN248[电子电信—物理电子学]