检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Xinxin Li Zhen Deng Sen Wang Jinbiao Liu Jun Li Yang Jiang Ziguang Ma Chunhua Du Haiqiang Jia Wenxin Wang Hong Chen 李欣欣;邓震;王森;刘金彪;李俊;江洋;马紫光;杜春花;贾海强;王文新;陈弘(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China;Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)
机构地区:[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [4]The Yangtze River Delta Physics Research Center,Liyang 213000,China [5]Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,China [6]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [7]Songshan Lake Materials Laboratory,Dongguan 523808,China.
出 处:《Chinese Physics B》2021年第9期384-387,共4页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.62004218,61991441,and 61804176);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2021005).
摘 要:SiGe spheres with different diameters are successfully fabricated on a virtual SiGe template using a laser irradiation method.The results from scanning electron microscopy and micro-Raman spectroscopy reveal that the diameter and Ge composition of the SiGe spheres can be well controlled by adjusting the laser energy density.In addition,the transmission electron microscopy results show that Ge composition inside the SiGe spheres is almost uniform in a well-defined,nearly spherical outline.As a convenient method to prepare sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size,this technique is expected to be useful for SiGe-based material growth and micro/optoelectronic device fabrication.
关 键 词:SIGE micro/nanospheres laser irradiation
分 类 号:TB383.1[一般工业技术—材料科学与工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:3.145.36.157