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作 者:Qing-Jian Lu Min Gao Chang Lu Fei Long Tai-Song Pan Yuan Lin 陆青鑑;高敏;路畅;龙飞;潘泰松;林媛(School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Guangxi Key Laboratory of Optical and Electronic Materials and Devices,School of Materials Science and Engineering,Guilin University of Technology,Guilin 541004,China;Medico-Engineering Cooperation on Applied Medicine Research Center,University of Electronic Science and Technology of China,Chengdu 610054,China)
机构地区:[1]School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [3]Guangxi Key Laboratory of Optical and Electronic Materials and Devices,School of Materials Science and Engineering,Guilin University of Technology,Guilin 541004,China [4]Medico-Engineering Cooperation on Applied Medicine Research Center,University of Electronic Science and Technology of China,Chengdu 610054,China
出 处:《Chinese Physics B》2021年第9期419-423,共5页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.61825102,51872038,and 52021001);the“111”Project,China(Grant No.B18011).
摘 要:Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT of VO_(2)thin film is important for the applications of this material in various devices.Here,the changes in thermal conductivity of epitaxial and polycrystalline VO_(2)thin film across MIT are probed by the time-domain thermoreflectance(TDTR)method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_(2)film to attenuate the impact from extra thermal interfaces.It is demonstrated that the method is feasible for the VO_(2)films with thickness values larger than 100 nm and beyond the phase transition region.The observed reasonable thermal conductivity change rates across MIT of VO_(2)thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate,which is different from the reported behavior of single crystal VO_(2)nanowires.The recovery of the relationship between thermal conductivity and electrical conductivity in VO_(2)film may be attributed to the increasing elastic electron scattering weight,caused by the defects in the film.This work demonstrates the possibility and limitation of investigating the thermal properties of VO_(2)thin films by the TDTR method without depositing any metal thermoreflectance layer.
关 键 词:vanadium dioxide thin film thermal conductivity time-domain thermoreflectance
分 类 号:TQ135.11[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]
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