Strain-dependent resistance and giant gauge factor in monolayer WSe_(2)  

作　　者：Mao-Sen Qin Xing-Guo Ye Peng-Fei Zhu Wen-Zheng Xu Jing Liang Kaihui Liu Zhi-Min Liao 秦茂森;叶兴国;朱鹏飞;徐文正;梁晶;刘开辉;廖志敏(State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China)

机构地区：[1]State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China

出　　处：《Chinese Physics B》2021年第9期464-468,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2018YFA0703703);the National Natural Science Foundation of China(Grant Nos.91964201,61825401,and 11774004).

摘　　要：We report the strong dependence of resistance on uniaxial strain in monolayer WSe_(2)at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe_(2)potential for application in the highly sensitive strain sensors and high-performance flexible electronics.

关 键 词：strain engineering van der Waals materials symmetry breaking orbital magnetization Berry curvature 

分 类 号：TQ136.13[化学工程—无机化工]