Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films  

作　　者：Qing-Fen Jiang Jie Lian Min-Ju Ying Ming-Yang Wei Chen-Lin Wang Yu Zhang 姜清芬;连洁;英敏菊;魏铭洋;王宸琳;张裕(School of Information Science and Engineering,Shandong Provincial Key Laboratory of Laser Technology and Application,Shandong University,Jinan 250100,China;Key Laboratory of Beam Technology of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,Beijing 100875,China)

机构地区：[1]School of Information Science and Engineering,Shandong Provincial Key Laboratory of Laser Technology and Application,Shandong University,Jinan 250100,China [2]Key Laboratory of Beam Technology of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,Beijing 100875,China

出　　处：《Chinese Physics B》2021年第9期528-533,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11875088);the National Key Basic Research Program of China(Grant No.2015CB921003).

摘　　要：The optical properties of materials are of great significance for their device applications.Different numbers of krypton ions are doped into high-quality Zn-polar ZnO films fabricated by molecular beam epitaxy(MBE)on sapphire substrates through ion implantation.Krypton is chemically inert.The structures,morphologies,and optical properties of films are measured.The x-ray diffraction(XRD)spectra confirm the wurtzite structures of Zn-polar ZnO films.Atomic force microscopy(AFM)results show that the films have pit surface structure and higher roughness after Kr ion implantation.A detailed investigation of the optical properties is performed by using the absorption spectrum,photoluminescence(PL),and spectroscopic ellipsometry(SE).The absorption spectrum is measured by UV-visible spectrophotometer and the bandgap energy is estimated by the Tauc method.The results show that the absorption increases and the bandgap decreases after Kr ion implantation.Moreover,the Kr ion implantation concentration also affects the properties of the film.The ellipsometry results show that the films'refractive index decreases with the Kr ion implantation concentration increasing.These results can conduce to the design and optimization of Kr ion-implanted polar ZnO films for optoelectronic applications.

关 键 词：polar ZnO film molecular beam epitaxy Kr implantation optical properties bandgap 

分 类 号：TN304.055[电子电信—物理电子学]