温度梯度对GaN热压电pn结电学性能的影响  

Influence of Temperature Gradient on the Electrical Properties of GaN Thermopiezoelectric pn Junction

作　　者：王蕾 秦国帅[2] WANG Lei;QIN Guoshuai(Henan Institute of Metrology,Zhengzhou 450018,CHN;School of Mechanics and Safety Engineering,Zhengzhou University,Zhengzhou 450001,CHN)

机构地区：[1]河南省计量科学研究.院,郑州450018 [2]郑州大学力学与安全工程学院,郑州450001

出　　处：《半导体光电》2021年第4期515-520,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(12002316);河南省科技攻关计划项目(192102210012)。

摘　　要：热感应产生的极化电势可以改变压电半导体结构内的力电物理量,这在人工智能、微机电系统(MEMS)中极具应用价值。文章针对温度梯度作用下的氮化镓(GaN)压电pn结,采用二维压电半导体多场耦合方程和精确的热电物理边界条件,数值分析了温度梯度改变对GaN热压电pn结内极化强度、电势、电场、载流子分布及电流等物理场的影响。结果表明:由于温度梯度场和极化电荷之间存在耦合,热压电pn结电学性能对温度梯度高度敏感,由温度改变产生的热感应极化电荷可以有效调节该结构的开启电压和载流子传输特性,这为操控与温度相关的智能异质结器件电流传输提供了新的方法和理论指导。The polarization potential generated by thermal variation can change the mechanical and electrical physical quantities in the piezoelectric semiconductor structure,which is of valuable application in artificial intelligence and MEMS.By utilizing a developed twodimensional model together with the accurate thermoelectric physical boundary conditions,it is systematically investigated the temperature gradient-dependent physical fields such as polarization,electric potential,electric field,carrier distribution and current in a GaN piezoelectric pn junction.It is found that,due to the coupling between the thermal-gradient fields and polarization charges,the electromechanical field of a piezoelectric pn junction has a quick response to thermal-gradient.Furthermore,gate voltage and carrier transport characteristics can be effectively tuned with thermal-induced and piezoelectric charges.This may provide an alternative approach and theoretical guidance to manipulate the carrier transport in intelligent heterojunction devices.

关 键 词：温度梯度 热压电pn结 压电半导体 电性能 多场耦合模拟 

分 类 号：TN304.9[电子电信—物理电子学]