压电半球冲击传感器的仿真与分析研究  

Simulation and Analysis of Piezoelectric Hemispherical ImpactSensor

作　　者：王柱 王大志[1] 赵奎鹏 袁钰恒 宗浩然 Wang Zhu;Wang Dazhi;Zhao Kuipeng;Yuan Yuheng;Zong Haoran(Key Laboratory for Micro/Nano Technology and System,Liaoning Province,Dalian University of Technology,Dalian,Liaoning 116024,China)

机构地区：[1]大连理工大学辽宁省微纳米技术与系统重点实验室,辽宁大连116024

出　　处：《机电工程技术》2021年第9期27-29,169,共4页Mechanical & Electrical Engineering Technology

摘　　要：利用COMSOL软件仿真分析了传感器性能,建立压电半球冲击传感器内部结构模型,初步确定传感器在多个角度上均具有冲击应力,分析冲击应力在厚膜上的分布情况,选择压电厚膜与基底结合最合适倒圆,在垂直方向上冲击产生电荷产生量和冲击加速度大小成正比,利用电流体喷印工艺制备了传感器半球压电厚膜,采用电喷打印装置进行电流体喷印实验保证厚膜质量,利用磁控溅射技术在厚膜表面制备电极并进行极化,最后使用小型冲击实验台和标准传感器进行测试,得到压电半球传感器在3000g加速度下冲击信号曲线,测得传感器的灵敏度为2.86 pc/g,验证了压电半球冲击传感器性能。The performance of the sensor was simulated and analyzed by COMSOL software,the internal structure model of piezoelectric hemispherical impact sensor was established.It was preliminarily determined that the sensor has impact stress at multiple angles,and the distribution of impact stress on thick film was analyzed.The most suitable rounding method was chosed for the combination of piezoelectric thick film and substrate.In the vertical direction,the amount of charge produced by the impact was proportional to the impact acceleration.Piezoelectric thick film of sensor was prepared by electrojet printing,to ensure the quality of thick film,the experiment of electrojet printing was carried out,the electrode was prepared by magnetron sputtering,and then the thick film was polarized.Finally,the impact signal curve of the piezoelectric hemispherical sensor under 3000g acceleration is obtained by using a small impact test bench and a standard sensor.The sensitivity of the sensor is 2.86 pc/g,which verifies the performance of the piezoelectric hemispherical impact sensor.

关 键 词：压电 冲击传感器 COMSOL仿真 电流体喷印 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]