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作 者:张聪[1] 杨迪 邵康 潘再法[1] Zhang Cong;Yang Di;Shao Kang;Pan Zaifa(College of Chemical Engineering,Zhejiang University of Technology,Hangzhou,Zhejiang 310014,China)
机构地区:[1]浙江工业大学化学工程学院,浙江杭州310014
出 处:《激光与光电子学进展》2021年第15期72-83,共12页Laser & Optoelectronics Progress
基 金:国家自然科学基金(10804099,21804119);浙江省自然科学基金重点项目(LZ18B050002)。
摘 要:长余辉发光材料的余辉性能取决于材料内部的陷阱能级,利用不同深度的陷阱对电子或空穴的捕获能力差别,可实现对余辉的调制。热释光对半导体中杂质和晶格缺陷所形成的局域能级非常敏感,是长余辉材料陷阱分布分析中一种有力的工具。通过测量长余辉发光材料的热释光谱,并采用合适的光谱曲线分析方法可以量化分析长余辉发光材料中的陷阱能级的深度和浓度分布等参数。但目前还缺乏一种公认的标准方法来衡量陷阱的深度和浓度等性质。在介绍热释光和热释曲线测定基本原理的基础上,回顾分析了不同动力学模型的峰形特点和适用条件,总结热释曲线的分析方法以及它们在分析长余辉材料陷阱中的应用,重点介绍初始上升法的应用和研究进展。The afterglow properties of persistent luminescence materials depend on the trap energy level in materials.The afterglow modulation can be achieved by tuning trap depths for the proper capture ability of electrons or holes.Thermoluminescence is sensitive to the trap energy levels formed by impurities and lattice defects in semiconductors.It is an essential tool for the trap distribution analysis of persistent luminescence materials. Parameters such as the depth and density of the trap energy level in persistent luminescence materials can be quantitatively analyzed by measuring thermoluminescence spectra and adopting an appropriate spectral-curve analysis method. However, a wellaccepted standard method for deducing the depth and density of traps from thermoluminescence spectra is still lacking.Herein, on the basis of the introduction of basic principles of thermoluminescence and thermoluminescence curve measurement, the peak shape characteristics of different kinetic models and their applicable conditions were first introduced. Then, the analysis methods of the thermoluminescence curve were summarized. Their applications in the analysis of trap characteristics of persistent luminescence materials were discussed after introducing thermoluminescence. The primary focus was on the application and research progress of the initial rise method.
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