Damage characteristics of dual-band high reflectors affected by nodule defects in the femtosecond regime  

作　　者：Bin Ma Jiaqi Han Jing Li Ke Wang Shuang Guan Xinshang Niu Haoran Li Jinlong Zhang Hongfei Jiao Xinbin Cheng Zhanshan Wang 马彬;韩佳岐;李静;王可;管爽;钮信尚;李浩然;张锦龙;焦宏飞;程鑫彬;王占山(Institute of Precision Optical Engineering,Tongji University,Shanghai 200092,China;Beijing Research Institute of Telemetry,Beijing 100094,China)

机构地区：[1]Institute of Precision Optical Engineering,Tongji University,Shanghai 200092,China [2]Beijing Research Institute of Telemetry,Beijing 100094,China

出　　处：《Chinese Optics Letters》2021年第8期23-27,共5页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61675156 and 61975153)。

摘　　要：The influence of nodule defects on the characteristics of femtosecond laser-induced damage has not been fully investigated.In this study,two types of 800 nm/1064 nm dual-band HfO_(2)=Si O_(2) high-reflection films with different configurations were analyzed.Combined with finite-difference time-domain electric field simulation and focused ion beam analysis,the initial state and growth process of femtosecond laser damage of nodules were explored.In particular,the sequence of blister damage determined by the film design and the inner damage caused by nodules were clarified.The rule of the laser-induced damage threshold of different size nodules was obtained.The difference in the damage behavior of nodules in the two types of films was elucidated.

关 键 词：femtosecond laser damage nodule defects dual-band high reflectors 

分 类 号：TN249[电子电信—物理电子学]