Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content  

作　　者：Zhicheng Dai Yushen Liu Guofeng Yang Feng Xie Chun Zhu Yan Gu Naiyan Lu Qigao Fan Yu Ding Yuhang Li Yingzhou Yu Xiumei Zhang 代志诚;刘玉申;杨国锋;谢峰;朱纯;谷燕;陆乃彦;樊启高;丁宇;李宇航;虞瀛舟;张秀梅(School of Science,Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,Jiangnan University,Wuxi 214122,China;School of Electronic and Information Engineering,Changshu Institute of Technology,Changshu 215556,China;The 38th Research Institute of China Electronics Technology Group Corporation,Hefei 230000,China)

机构地区：[1]School of Science,Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,Jiangnan University,Wuxi 214122,China [2]School of Electronic and Information Engineering,Changshu Institute of Technology,Changshu 215556,China [3]The 38th Research Institute of China Electronics Technology Group Corporation,Hefei 230000,China

出　　处：《Chinese Optics Letters》2021年第8期100-104,共5页中国光学快报（英文版）

基　　金：supported in part by the National Natural Science Foundation of China(No.61974056);the Key Research and Development Program of Jiangsu Province(No.BE2020756);the National First-Class Discipline Program of Food Science and Technology(No.JUFSTR20180302);the Science and Technology Development Foundation of Wuxi(No.N20191002);the Postgradute Research&Practice Innovation Program of Jiangsu Province(No.KYCY20_1769);the Undergraduate Innovation and Entrepreneurship Training Program of Jiangsu Province(No.202010295125Y)。

摘　　要：We have fabricated the Al Ga N solar-blind ultraviolet metal–semiconductor–metal(MSM)photodetectors(PDs)with an Al composition of 0.55.The surface roughness and dislocations of the high-Al-content Al0.55 Ga0.45 N epitaxial layer are analyzed by atomic force microscopy and transmission electron microscopy,respectively.The device exhibits high spectral responsivity and external quantum efficiency due to the photoconductive gain effect.The current reveals a strong dependence on high temperatures in the range of 4–10 V.Moreover,the Poole–Frenkel emission model and changing space charge regions are employed to explain the carrier transport and photoconductive gain mechanisms for the Al Ga N PD,respectively.

关 键 词：metal–semiconductor–metal solar blindness PHOTODETECTOR Poole–Frenkel emission photoconductive gain 

分 类 号：TN36[电子电信—物理电子学]