碲镉汞激光线刻蚀研究  

Study on laser line etching of HgCdTe

作　　者：张赫 蒋鸿儒 潘晨博 ZHANG He;JIANG Hongru;PAN Chenbo(School of Sciences, Shanghai University, Shanghai 200444, China;Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China)

机构地区：[1]上海大学理学院,上海200444 [2]中国科学院上海高等研究院,上海201210

出　　处：《合肥工业大学学报（自然科学版）》2021年第10期1359-1362,共4页Journal of Hefei University of Technology：Natural Science

摘　　要：飞秒激光对碲镉汞(HgCdTe)材料刻蚀形成PN结。文章进行了飞秒激光刻蚀试验,使用1 kHz飞秒激光在P型HgCdTe上刻蚀形成线刻蚀区域,并采用激光束诱导电流(laser beam induced current,LBIC)技术对刻蚀区域进行光电流性质探测。试验结果表明,LBIC扫描信号的峰形表现出明显的方向性,刻线两侧的光电流信号存在明显差异。The femtosecond laser etches the HgCdTe material to form a PN junction.This experiment uses a 1 kHz femtosecond laser to etch on P-type HgCdTe to form line etched area.The laser beam induced current(LBIC)technology is used to detect the photocurrent properties in the etched area.It is found that the peak shape of LBIC signal show obvious directionality,and the location of the signal is related to the direction of the laser etch.

关 键 词：碲镉汞(HgCdTe) PN结 激光束诱导电流(LBIC) 飞秒激光打孔 脉冲时间 

分 类 号：TN215[电子电信—物理电子学]