基于磁控磨料定向的SiC固相芬顿反应研抛盘制备及性能研究  

Study on the Preparation and Lapping Performance of SiC Solid-state Fenton Reaction Lapping-polishing Plates Based on Magnetically Controlled Abrasive Orientation

作　　者：路家斌[1] 曾帅 阎秋生[1] 熊强 邓家云 LU Jia-bin;ZENG Shuai;YAN Qiu-sheng;XIONG Qiang;DENG Jia-yun(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学机电工程学院,广州510006

出　　处：《表面技术》2021年第10期353-362,共10页Surface Technology

基　　金：国家自然科学基金(52175385,52075102);NSFC-广东省联合基金(U1801259)。

摘　　要：目的提出结合磁控磨料定向和固相芬顿反应的研抛方法,研制新型研抛盘,提高单晶Si C精密加工效率及表面质量。方法通过磁场控制磁性粒子形成的链串结构,促使磨料定向分布,制备研抛盘。利用研抛盘中的磁性粒子与过氧化氢发生的固相芬顿反应生成羟基自由基(·OH),进而氧化单晶Si C,在其表面生成结合力小、硬度低的Si O_(2)氧化层。通过定向分布的磨料运动,去除氧化层,实现高效率、高表面质量的研抛加工。同时,研究磁场强度、磨料定向、固相芬顿反应及其协同作用对单晶Si C研抛性能的影响。结果选用在磁场强度为100 mT条件下制备的研抛盘研抛60 min后,Si C C面的粗糙度Ra由100 nm降为1.19 nm,材料去除率达到33.71 nm/min。单纯磨料定向作用使单晶Si C C面和Si面的材料去除率分别提高了60.23%和111.19%,单纯固相芬顿反应作用则分别提高了78.5%和100.09%,两者的协同作用使材料去除率分别提高了100%和144.55%,表面粗糙度Ra分别下降了345.83%和118.78%。结论新型研抛盘综合运用了固相芬顿反应的化学作用和磨料定向的机械去除作用,能大幅度提高材料去除率,获得较好的研抛质量,有望在单晶Si C的精研和抛光阶段得到较好的应用。The work aims to improve the precision machining efficiency and surface quality of single-crystal SiC,a lapping-polishing method combining magnetically controlled abrasive orientation and the solid-state Fenton reaction was proposed,and a new type of lapping-polishing plate was developed and lapping-polishing performance experimental research was carried out.A magnetic field controlled the chain structure formed by magnetic particles to promote abrasives’directional distribution to prepare the lapping-polishing plate.The solid-state Fenton reaction between the magnetic particles and H_(2)O_(2)was used to generate hydroxyl radicals(·OH),and then the single-crystal SiC was oxidized to generate a silicon dioxide oxide layer with low bonding force and low hardness on its surface.The oxide layer was removed by a directionally distributed abrasive movement to achieve high-efficiency and high-quality surface lapping-polishing.The effects of magnetic field strength,abrasive orientation,solid-state Fenton reaction and their synergistic effects on the lapping-polishing performance of single-crystal SiC were studied.The experimental results showed that the surface roughness of the C-face of SiC decreased from Ra 100 nm to Ra 1.19 nm,and the material removal rate reached 33.71 nm/min when the magnetic field intensity was 100 mT and the lapping-polishing time was 60 minutes.The material removal rate of the C-face and the Si-face of SiC was increased by 60.23%and 111.19%,respectively.It was increased by 78.5%and 100.09%for the simple abrasive orientation effect and the solid-state reaction effect,respectively.Their synergy could make the material removal rate increased by 100%and 144.55%,respectively,and the surface roughness Ra decreased by 345.83%and 118.78%,respectively.The new lapping-polishing plate combines the chemical action of the solid-state Fenton reaction and the mechanical removal of the abrasive orientation,improving the material removal rate and obtaining a better lapping-polishing surface quality.It is expec

关 键 词：单晶SiC 磨料定向 固相芬顿反应 研抛盘 材料去除率 表面粗糙度 

分 类 号：TG580.1[金属学及工艺—金属切削加工及机床]