高压大容量MMC子模块下部IGBT损耗优化方法  

Loss Optimization for Bottom IGBT of Submodule in High-voltage and Large-capacity Modular Multilevel Converter

作　　者：许彬 李景波 宁志彦 王高勇 周军川 贺之渊 XU Bin;LI Jingbo;NING Zhiyan;WANG Gaoyong;ZHOU Junchuan;HE Zhiyuan(State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute Co.,Ltd.),Changping District,Beijing 102209,China;Beijing Key Laboratory of High Power Electronic,Changping District,Beijing 102209,China)

机构地区：[1]先进输电技术国家重点实验室(全球能源互联网研究院有限公司),北京市昌平区102209 [2]大功率电力电子北京市重点实验室,北京市昌平区102209

出　　处：《电网技术》2021年第10期4025-4036,共12页Power System Technology

摘　　要：当高压大容量模块化多电平换流器(modular multilevel converter,MMC)传输有功功率时,由于桥臂电流中存在直流分量,同一子模块中的4支功率半导体器件产生的损耗并不均衡。特别是当MMC工作于逆变工况时,子模块下部IGBT的损耗尤为严重。由于IGBT对温度变化十分敏感且易于失效,因此在逆变工况下子模块下部IGBT的温升管控是限制MMC安全运行区间的主导因素。提出一种器件层面的损耗优化方法,其不仅可以减少逆变工况下子模块下部IGBT的损耗,还可以减少系统的总体损耗。最后,通过PSCAD/EMTDC仿真和MMC样机高压试验证明了所提方法的正确性和有效性。When active power is transferred through high power modular multilevel converter(MMC),the power loss distribution among the four power semiconductors in a submodule(SM)is uneven due to the existence of a DC bias in the arm current.It is further deteriorated that when the MMC operates as an inverter,the bottom insulated gate bipolar transistor(IGBT)modules in the SM generate loss the most.Since IGBTs are sensitive to the temperature changes and prone to failures,the thermal management of the bottom IGBT under inverter conditions is the main concern to limit the safe operation areas of the MMC.This paper presents a component-level loss optimization scheme,which can reduce both the thermal stress on the bottom IGBT modules and the total loss of the inverter.Last,the correctness and effectiveness of the proposed method are verified by the PSCAD/EMTDC simulation and the high-voltage MMC prototype experimental results.

关 键 词：模块化多电平换流器 功率半导体器件损耗 损耗优化方法 

分 类 号：TM721[电气工程—电力系统及自动化]