Zn^(2+)掺杂SrAl_(2)Si_(2)O_(8)陶瓷的结构及微波介电性能  

Structure and Microwave Dielectric Properties of Zn^(2+)Doped SrAl_(2)Si_(2)O_(8) Ceramic

作　　者：朱惠 丁士华[1] 张云 宋天秀[1] 李超 ZHU Hui;DING Shihua;ZHANG Yun;SONG Tianxiu;LI Chao(School of Materials Science and Engineering,Xihua University,Chengdu 610039,China)

机构地区：[1]西华大学材料科学与工程学院,成都610039

出　　处：《硅酸盐学报》2021年第9期1928-1934,共7页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51902268);四川省科技厅重点研发项目(2021YFG0235);教育部春晖计划项目(Z2011077);四川省特种材料及制备技术重点实验室开放课题资助项目(szjj2017-059)。

摘　　要：采用传统固相反应法制备(Sr1-xZnx)Al_(2)Si_(2)O_(8)(x=0,0.005,0.010,0.030,0.060)微波介电陶瓷,探讨不同Zn2+取代量对SrAl_(2)Si_(2)O_(8)(SAS)陶瓷晶体结构和微波介电性能的影响。将第一性原理引入到锶长石系微波介电陶瓷分析方法中,以确定取代元素(Zn2+)可能占据的位置(Sr^(2+),Al^(3+))。结果表明:Zn^(2+)取代可促进SAS品质因数的提高(Q×f:37502~48252 GHz),同时也改善了SAS陶瓷样品的密度和谐振频率温度系数(τf)。当x=0.010、烧结温度为1500℃时,(Sr0.99Zn0.01)Al_(2)Si_(2)O_(8)陶瓷获得最佳的介电性能:ε_(r)=7.0,Q×f=48252 GHz,τ_(f)=-36.35×10^(-6)/℃。(Sr1-xZnx)Al_(2)Si_(2)O_(8)(x=0,0.005,0.010,0.030,0.060)microwave dielectric ceramic was prepared by a solid-phase sintering method.The effect of Zn2+doping content on the crystal structure and microwave dielectric properties of SrAl_(2)Si_(2)O_(8)(SAS)ceramic was investigated.The site(Sr^(2+) or Al^(3+))was determined by the first-principle calculation to confirm the site occupied by Zn^(2+).The result shows that Zn^(2+) substitution can increase SAS Q×f value(from 37502 GHz to the maximum value of 48252 GHz),and improve the density and τ_(f )value.The(Sr0.99Zn0.01)Al_(2)Si_(2)O_(8) ceramic sintered at 1500℃for 5 h has excellent microwave dielectric properties(i.e.,ε_(r)=7.0,Q×f=48252 GHz,τ_(f)=-36.35×10^(-6)/)℃.

关 键 词：低介电常数 锶长石 微波介电性能 晶体结构 

分 类 号：TQ174[化学工程—陶瓷工业]