基于干扰动态响应机理的SiC MOSFET驱动设计  

SiC MOSFET Gate Driver Design Based on Interference Dynamic Response Mechanism

作　　者：邵天骢 郑琼林[1] 李志君 李虹[1] 刘建强[1] Shao Tiancong;Zheng Trillion Q;Li Zhijun;Li Hong;Liu Jianqiang(School of Electrical Engineering Beijing Jiaotong University,Beijing 100044 China;Global Power Technology Co.Ltd,Beijing 100192 China)

机构地区：[1]北京交通大学电气工程学院,北京100044 [2]泰科天润半导体科技(北京)有限公司,北京100192

出　　处：《电工技术学报》2021年第20期4204-4214,共11页Transactions of China Electrotechnical Society

摘　　要：目前碳化硅(SiC)MOSFET大多沿用Si MOSFET和IGBT的驱动设计方法。然而,由于SiC MOSFET相比Si器件具有更高的开关速度,因而栅极内阻、驱动回路电感和功率回路电感导致的栅源电压干扰情况也值得探索。该文分析栅源电压干扰产生的过程,进而归纳提炼出一种基于干扰动态响应机理的SiC MOSFET驱动参数标幺化设计方法。从开关结电容的等效电路出发,推导出功率回路和驱动回路的传递函数,基于驱动和功率双回路传递函数,研究揭示栅源电压的干扰动态响应机理。进而,引入标幺化的参数表达形式,以标准量化驱动参数对于栅源电压干扰传导路径的影响,提出基于干扰动态响应机理的SiC MOSFET驱动设计原则。最后,搭建双脉冲实验平台,验证该驱动设计原则的合理性。Currently,the gate driver design method of SiC MOSFET is mostly inherited from the Si MOSFET and IGBT.However,since SiC MOSFETs have higher switching speed than Si devices,it is also worth exploring the gate-source voltage interference caused by gate internal resistance,gate driver inductance and power circuit inductance.In this paper,the process of gate-source voltage interference is analyzed,and then the method of driver parameter per-united design based on interference dynamic response mechanism is summarized and extracted.This paper deduces the transfer functions of the power loop and the driver loop according to the equivalent circuit of the junction capacitance.Then,the interference dynamic response mechanism is revealed.Furthermore,a per-united parameter expression form is introduced to quantify the influence of gate driver parameters on the interference conduction path of gate-source voltage.The SiC MOSFET gate driver design principle is proposed based on the interference dynamic response mechanism.Finally,a double-pulse experimental platform was built to verify the rationality of the driver design principle.

关 键 词：SiC MOSFET 驱动设计 栅源电压干扰 动态响应 

分 类 号：TM402[电气工程—电器]