Ho掺杂对Ba(Zr_(0.1)Ti_(0.9))O_(3)基陶瓷介电性能的影响  

The effect of Ho doping on the dielectric properties of Ba(Zr_(0.1)Ti_(0.9))O_(3)-based ceramics

作　　者：马蓉 崔斌[2] 胡登卫 王艳 MA Rong;CUI Bin;HU Deng-wei;WANG Yan(Engineering Research Center of Advanced Ferroelectric Functional Materials, College of Chemistry and Chemical Engineering, Baoji University of Arts and Sciences, Baoji 721013, Shaanxi, China;College of Chemistry and Materials Science, Northwest University, Xi'an 710127, Shaanxi, China)

机构地区：[1]宝鸡文理学院化学化工学院,铁电功能材料工程(技术)研究中心,陕西宝鸡721013 [2]西北大学化学与材料科学学院,陕西西安710127

出　　处：《宝鸡文理学院学报（自然科学版）》2021年第3期46-50,共5页Journal of Baoji University of Arts and Sciences(Natural Science Edition)

基　　金：陕西省自然科学基础研究计划项目(2021JQ-810);陕西省教育厅专项科研计划项目(19JK0035);陕西省横向课题(2021-KJHX001)。

摘　　要：目的通过Ho掺杂提高Ba(Zr_(0.1)Ti_(0.9))O_(3)(BZT)基Y5V型陶瓷的介电性能。方法采用Sol-gel一步法研究Ho掺杂对BZT基Y5V型纳米粉体及陶瓷微观形貌及介电性能的影响规律。结果当Ho含量为0.10 mol%时,陶瓷最大介电常数为19943,容温变化率(TCC)符合Y5V标准。结论随Ho含量的增加,BZT陶瓷的居里温度向低温方向移动,居里峰展宽,最大介电常数先增大后减小。因此,通过匹配的元素对材料进行掺杂改性,同时辅以优化的制备工艺可以实现陶瓷介电性能的有效提升。Purposes—To improve the dielectric properties of Ba(Zr_(0.1)Ti_(0.9))O_(3)(BZT)-based Y5V ceramics through Ho doping.Methods—Sol-gel one-step method was used to study the influence of Ho doping on the micromorphology and dielectric properties of BZT-based Y5V nanopowders and ceramics.Result—When the Ho content is 0.10 mol%,the maximum dielectric constant of the ceramic is 19943,and the the temperature capacitance characteristic(TCC)meets the Y5V standard.Conclusion—With the increase of Ho content,the Curie temperature of BZT ceramics moves toward low temperature,the Curie peak broadening,and the maximum dielectric constant first increases and then decreases.Therefore,choosing appropriate elements for doping and supplementing with optimized processes can effectively improve the dielectric properties of ceramics.

关 键 词：Ho掺杂 Sol-gel一步法 Y5V 介电性能 

分 类 号：O611[理学—无机化学]