Effects of taping on grinding quality of silicon wafers in backgrinding  

作　　者：Zhigang DONG Qian ZHANG Renke KANG Shang GAO Haijun LIU 

机构地区：[1]Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116024,China [2]CIMS Institute,School of Mechanical Engineering,Hefei University of Technology,Hefei 230009,China

出　　处：《Frontiers of Mechanical Engineering》2021年第3期559-569,共11页机械工程前沿（英文版）

基　　金：The authors acknowledge the financial support from the National Natural Science Foundation of China(Grant Nos.51991372 and 51805135).

摘　　要：Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers.Grinding experiments using coarse and fine resinbond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley(PV),surface roughness,and subsurface damage of silicon wafers after grinding.Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage.However,the PV value,surface roughness,and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited.The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness.The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness.We hope the experimental finding could help fully understand the role of taping in backgrinding.

关 键 词：TAPING silicon wafer backgrinding subsurface damage surface roughness 

分 类 号：TG580.68[金属学及工艺—金属切削加工及机床]