Synthesis and photoluminescence kinetics of Ce^(3+)-doped CsPbI3 QDs with near-unity PLQY  

作　　者：Bowang Shu Yajing Chang Jinhua Zhang Xiaopeng Cheng Dabin Yu 

机构地区：[1]State Key Laboratory of Pulsed Power Laser Technology,National University of Defense Technology,Hefei 230037,China

出　　处：《Nano Research》2021年第10期3352-3357,共6页纳米研究（英文版）

基　　金：This work was finanicially supported by the Key Research and Development Project of Anhui Province of China(No.1704a0902023);the Open Research Fund of State Key Laboratory of Plused Power Laser Technology(No.SKL2019KF09)。

摘　　要：CsPbI_(3)perovskite quantum dots(QDs)have great potential in optoelectronic devices due to their suitable band-gaps,but low photoluminescence quantum yields(PLQYs)and poor phase stability seriously impede their practical application.This paper reports the synthesis of Ce^(3+)-doped CsPbI_(3)QDs by a hot injection method.In the presence of the dopant(Ce^(3+)),the highest PLQY of CsPbI_(3)QDs reached 99%,i.e.,near-unity PLQY,and the photoluminescence(PL)emission of CsPbI_(3)QDs could be well maintained compared to that of the undoped ones.The photoluminescence kinetics of Ce^(3+)-doped CsPbI_(3)QDs was investigated by the ultrafast transient absorption technologies,which exhibited that the Ce^(3+)not only increased the density of excitonic states close to the high energy excitonic states(HES),but also provided more emissive channels.Moreover,the radiative recombination rates calculated by the combination of PL lifetime and PLQY further illustrated the Pb2+vacancies were filled with Ce^(3+)ions so that the PL quenching of the CsPbI_(3)QDs could be effectively prevented.The theoretic analysis uncovered the mechanism of the high PLQY and stable PL emission of the Ce^(3+)-doped CsPbI_(3)QDs.

关 键 词：CsPbI_(3)quantum dots Ce^(3+)-doped CsPbI_(3) near-unity photoluminescence quantum yield(PLQY) photoluminescence kinetics 

分 类 号：O61[理学—无机化学]