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作 者:Juntong Zhu Hao Wang Liang Ma Guifu Zou
机构地区:[1]College of Energy,Soochow Institute for Energy and Materials Innovations,and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou 215006,China [2]Research Institute of Superconductor Electronics,Nanjing University,Nanjing 210023,China [3]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China
出 处:《Nano Research》2021年第10期3416-3422,共7页纳米研究(英文版)
基 金:the support from the National Natural Science Foundation of China(Nos.21971172 and 21671141);the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institutions for Optical Engineering in Soochow University,and Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering in Changzhou University(No.RC-ICRS/15-16/02(HKBU)).
摘 要:Two-dimensional materials have been demonstrated as promising toolboxes for optoelectronics.Transition metal carbides and nitrides(MXenes),members of an emerging family of two-dimensional materials,have drawn extensive attention in optoelectronics owing to their excellent conductivity and tunable electronic properties.Herein,a photodetector based on the two-dimensional van der Waals heterostructure of Ti_(3)C_(2)T_(x)MXene and a MoS_(2)monolayer was constructed to observe the ambipolar photoresponse,which showed a positive photoresponse in the visible spectrum(500-700 nm)and a negative photoresponse at longer wavelengths(700-800 nm).The device exhibited a high negative responsivity of 1.9 A/W and a detectivity of 2.1×10^(10)Jones under 750 nm light illumination.Detailed experiments demonstrate that the negative photoresponse arises from the heterostructureinduced trap energy level,which confines the excited photoelectrons and leads to an inverse current.This work demonstrates a unique optoelectronic phenomenon in MoS_(2)/MXene heterostructures and provides valuable insights into the development of new photodetection materials.
关 键 词:MXene MoS_(2) two-dimensional heterostructure PHOTODETECTOR ambipolar photoresponse
分 类 号:TB33[一般工业技术—材料科学与工程]
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