Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer  

作　　者：Susu Yang Houfu Song Yan Peng Lu Zhao Yuzhen Tong Feiyu Kang Mingsheng Xu Bo Sun Xinqiang Wang 

机构地区：[1]State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China [2]Dongguan Institute of Opto-Electronics,Peking University,Dongguan 523808,China [3]Tsinghua-Berkeley Shenzhen Institute,Tsinghua University,Shenzhen 518055,China [4]Institute of Novel Semiconductors and State Key Laboratory of Crystal Material,Shandong University,Jinan 250100,China [5]Tsinghua Shenzhen International Graduate School,and Guangdong Provincial Key Laboratory of Thermal Management Engineering&Materials,Tsinghua University,Shenzhen 518055,China [6]Laboratory of Advanced Materials,School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China [7]Institute of Novel Semiconductors and School of Microelectronics,Shandong University,Jinan 250100,China

出　　处：《Nano Research》2021年第10期3616-3620,共5页纳米研究（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(No.12004211);the Guangdong Natural Science Foundation(No.2019A1515010868);the Guangdong Key Research and Development Program(No.2019B010132001);Shenzhen Peacock Program;This work was also supported by Beijing Outstanding Young Scientist Program(No.BJJWZYJH0120191000103);the Major Science and Technology Innovation Project of Shandong Province(No.2019JZZY010210).

摘　　要：Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In this work,we experimentally measured thermal boundary conductance(TBC)at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance(TDTR).We find that the TBCs of GaN/Ti/AuSn/Ti/Si,GaN/Ti/AuSn/Ti/SiC,and GaN/Ti/AuSn/Ti/diamond,are 16.5,14.8,and 13.2 MW·m^(-2)·K^(-1)at room temperature,respectively.Our measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface,due to the large mismatch of phonon modes between AuSn/Ti and substrates,shown as the difference of Debye temperature of two materials.Overall,we measured the TBC at interface between GaN and thermal conductive substrates,and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view.

关 键 词：GaN thermal boundary conductance time-domain thermoreflectance(TDTR) diffuse mismatch model 

分 类 号：TG14[一般工业技术—材料科学与工程]