Growth of Single-walled Carbon Nanotubes on Substrates Using Carbon Monoxide as Carbon Source  

作　　者：ZHAO Xue ZHANG Xinrui LIU Qidong ZHANG Zeyao LI Yan 

机构地区：[1]Beijing National Laboratory for Molecular Science,Key Laboratory for the Physics and Chemistry of Nanodevices,State Key Laboratory of Rare Earth Materials Chemistry and Applications,College of Chemistry and Molecular Engineering,Peking University,Beijing,100871,P.R.China [2]Peking University Shenzhen Institute,Shenzhen,518057,P.R.China [3]College of Engineering,Peking University,Beijing,100871,P.R.China [4]PKU-HKUST ShenZhen-HongKong Institution,Shenzhen,518057,P.R.China

出　　处：《Chemical Research in Chinese Universities》2021年第5期1125-1129,共5页高等学校化学研究（英文版）

基　　金：This work was supported by the Project of the Ministry of Science and Technology of China(No.2016YFA0201904);the National Natural Science Foundation of China(No.21631002);the Project of the Beijing National Laboratory for Molecular Sciences,China(BNLMSCXTD-202001);the Shenzhen Basic Research Project,China(No.JCYJ20170817113121505);the Shenzhen KQTD Project,China(No.KQTD20180411143400981).

摘　　要：The growth of single-walled carbon nanotubes(SWCNTs)on substrates has attracted great interests because of the potential applications in various fields.Carbon monoxide(CO)was used as the carbon source for the growth of SWCNTs on silicon substrates.Random or oriented SWCNTs can be produced by varying the CO flow rate.When the flow rate of CO was as low as 20 sccm(sccm:standard cubic centimeter per minute).

关 键 词：SWCNTS CARBON walled 

分 类 号：TB383[一般工业技术—材料科学与工程]