铋(Ⅲ)-卤素络阴离子选择电极的研究  

Studies on Bismuth(Ⅲ)Halogeno-Complex Ion-Selective Electrodes

作　　者：齐洪韬 邝曙民 Qi Hongtao;Kuang Shumin(Suzhou Railway Teachers'Gollege,Suzhou;Dalian Railway Institute,Dalian)

机构地区：[1]苏州铁道师范学院 [2]大连铁道学院

出　　处：《高等学校化学学报》1987年第4期369-371,共3页Chemical Journal of Chinese Universities

摘　　要：我们曾报导了PVC膜四碘络铋离子选择电极的研制。现又研制了铋(Ⅲ)-溴,铋(Ⅲ)-氯的络阴离子PVC膜选择电极。本文比较了三种铋(Ⅲ)-卤素络阴离子选择电极的主要性能,并对络阴离子电极配位体的选择条件及阳离子的干扰规律进行了讨论。Three new PVC matrix membrane bismuth(Ⅲ)ion-selective electrodes based on triheptyldodecyl-ammonium and iodo-complex,bromo-complex,chloro-complex of bismuth(Ⅲ)ion pair were described.The electrodes show Nernstian ranges from 10^(-2)M to 3×10^(-6)M Bi^(3+)(in 0.15 M KIsolution),from 5×10^(-3)M to 4×10^(-6)M Bi^(3+)(in 0.40 M KBr solution),and from 10^(-2)M to 4×10-5M Bi^(2+)(in 1.5 M NaCl solution)with the slopes of 60,40,38 mV/pBi,respectively.The potential selectivity coefficients and other characteristics of the electrodes were reported.The selective conditions of the ligand of complex anion and the law of interference of foreign cations were discussed.

关 键 词：离子选择电极 铋(Ⅲ) PVC膜 配位体 卤素 干扰规律 络阴离子 阳离子 

分 类 号：TQ3[化学工程]