From narrow-bandgap GeSe to wide-bandgap GeS solar cells  

作　　者：Kanghua Li Jiang Tang 

机构地区：[1]Wuhan National Laboratory for Optoelectronics(WNLO),School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Science China Chemistry》2021年第10期1605-1606,共2页中国科学（化学英文版）

摘　　要：Ge-based binary chalcogenides including GeSe and GeS have recently emerged as promising photovoltaic absorber materials owing to their attractive optoelectronic properties such as suitable bandgaps of 1.14 eV(GeSe) for singlejunction solar cells and 1.7 eV(GeS) for tandem solar cells as top cells and indoor photovoltaics(IPVs).

关 键 词：NARROW ABSORBER ATTRACTIVE 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]