放电等离子烧结制备多元素共掺的Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95)氧离子导体  被引量:1

Spark Plasma Sintering of Multi-element Co-doped Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) Oxide Ion Conductor

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作  者:李敏燕 贺婵 王伟国[1] 郝刚领[1] 李先雨 LI Minyan;HE Chan;WANG Weiguo;HAO Gangling;LI Xianyu(College of Physics and Electronic Information,Yan’an University,Yan’an 716000,China)

机构地区:[1]延安大学物理与电子信息学院,延安716000

出  处:《中国陶瓷》2021年第9期46-51,共6页China Ceramics

基  金:国家自然科学基金资助项目(12064044,11604286)。

摘  要:分别采用放电等离子烧结和传统烧结方法制备Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95)氧离子导体。交流阻抗测试结果显示,在543 K时,放电等离子烧结方法制备的试样的晶粒电导率为1.50×10^(-4) S/cm,是传统烧结方法制备的试样在相同温度下晶粒电导率的2倍(7.50×10^(-5) S/cm)。借助于介电模量谱分析,放电等离子烧结制备的试样中具有更高的可动氧空位浓度和更好的氧空位迁移能力,从而导致了其晶粒电导率高于传统烧结方法制备的试样的晶粒电导率,这将为提高Na_(0.5)Bi_(0.5)TiO_(3)基氧离子导体的电学性能提供思路。Spark plasma sintering and traditional sintering methods were used to fabricate the sodium, potassium and magnesium co-doped Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) oxide ion conductor. By the AC impedance test, the grain conductivity of the sample fabricated by the means of spark plasma sintering is 1.50×10^(-4) S/cm at 543 K, which is around 2 times higher than that of the Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) sample prepared by the conventional sintering method at the same temperature(7.50×10^(-5) S/cm). By analyzing the dielectric modulus spectrum, it can be obtained that there is higher movable oxygen vacancy concentration and better oxygen vacancy mobility in the Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) sample fabricated through spark plasma sintering route than that of the Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) sample fabricated by traditional sintering, resulting in higher grain conductivity in the Na_(0.52)Bi_(0.46)K_(0.02)Ti_(0.99)Mg_(0.01)O_(2.95) sample fabricated by the means of spark plasma sintering.This will provide an effective strategy to improve the electrical properties of Na_(0.5)Bi_(0.5)TiO_(3)-based oxygen ionic conductor.

关 键 词:放电等离子烧结 氧离子导体 电导率 可动氧空位浓度 氧空位迁移能力 

分 类 号:TQ174.75[化学工程—陶瓷工业]

 

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