与Y_(2)O_(3)共同掺杂下Sb_(2)O_(5)掺杂量对SnO_(2)陶瓷压敏电阻电性能的影响  

Effect of Doping Amount of Sb_(2)O_(5) on Electrical Properties of SnO_(2) Ceramic Piezoresistor Under Co-doping with Y_(2)O_(3)

作　　者：郁培源 赵洪峰(指导)[1] YU Peiyuan;ZHAO Hongfeng(State Key Laboratory of Safety Control and Simulation for Power Systems and Large Power Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China)

机构地区：[1]新疆大学电气工程学院,电力系统及大型发电设备安全控制和仿真国家重点实验室,乌鲁木齐830046

出　　处：《机械工程材料》2021年第9期26-29,共4页Materials For Mechanical Engineering

基　　金：国家自然科学基金资助项目(51762038);新疆维吾尔自治区研究生科研创新项目(XJ2020G057)。

摘　　要：通过在SnO_(2)陶瓷压敏电阻中共同掺杂Sb_(2)O_(5)和Y_(2)O_(3)(0.05%,物质的量分数),采用扫描电镜和阻抗仪研究了Sb_(2)O_(5)掺杂量(0,0.05%,0.10%,0.15%,物质的量分数)对SnO_(2)压敏电阻微观形貌、电压梯度和晶粒电阻的影响。结果表明:随Sb_(2)O_(5)掺杂量增加,SnO_(2)压敏电阻的晶粒尺寸和界面态密度先增大后减小,电压梯度、非线性系数和泄漏电流密度先减小后增大;Sb2 O5掺杂量为0.10%时,SnO_(2)压敏电阻的界面态密度最大,泄漏电流密度最小,晶粒电阻最小,综合电性能最好。The effect of doping amounts(0,0.05%,0.10%,0.15%,mole fraction)of Sb2 O5 on the micromorphology,voltage gradient and grain resistance of SnO_(2)piezoresistor was studied by scanning electron microscope and impedance meter through co-doping Sb2 O5 and Y_(2)O_(3)(0.05%,mole fraction)into SnO_(2)ceramic piezoresistor.The results show that with increasing doping amount of Sb2 O5,the grain size and interfacial state density of SnO_(2)piezoresistor increased first and then decreased,and the voltage gradient,nonlinear coefficient and leakage current density decreased first and then increased.When the doping amount of Sb2 O5 was 0.10%,the interfacial state density of SnO_(2)piezoresistor was the largest,the leakage current density was the smallest,the grain resistance was the smallest,and the integrated electrical performance was the best.

关 键 词：SnO_(2)压敏电阻 Sb_(2)O_(5)含量 电压梯度 晶粒电阻 

分 类 号：TB321[一般工业技术—材料科学与工程]