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作 者:范丽琴 Fan Liqin(Xiamen Institute of Technology,Xiamen 361021)
机构地区:[1]厦门工学院,厦门361021
出 处:《化工新型材料》2021年第9期280-283,共4页New Chemical Materials
基 金:福建省中青年教师教育科研项目(JAT170806)。
摘 要:采用磁控溅射在衬底上溅射掺铝氧化锌(AZO)和掺锡氧化铟(ITO)薄膜,比较AZO薄膜和ITO薄膜的光谱响应范围及其光学与电学综合性能。在厚度为200nm左右时,AZO薄膜的品质因子(0.61×10^(-3)Ω^(-1))比ITO(2.23×10^(-3)Ω^(-1))小一个数量级,当薄膜厚度增加到390nm左右时,AZO薄膜的品质因子为2.05×10^(-3)Ω^(-1),ITO薄膜的品质因子为4.16×10^(-3)Ω^(-1),此时AZO薄膜的品质因子与213nm的ITO薄膜的品质因子数值接近,而两种薄膜的厚度差仅为182nm。在厚度可允许的条件下,选择AZO薄膜作为太阳电池的透明导电电极,可降低成本,此研究对推动廉价太阳电池的发展具有重要意义。Transparent conducting Al-doped zinc oxide and In-doped tin oxide films were deposited on glass substrates by magnetron sputtering.The high transmission spectrum and photoelectric properties of AZO and ITO films were compared.The figure of merit FTCof AZO(0.61×10^(-3)Ω^(-1))was one order lower than ITO(2.23×10^(-3)Ω^(-1))when the thickness was 200 nm.When the film thickness increased to around 390 nm,the FTCof AZO was 2.05×10^(-3)Ω^(-1),and the ITO was 4.16×10^(-3)Ω^(-1),the FTCof AZO was closed to the FTCof ITO.When its thickness wais 213 nm,their thickness difference was only 183 nm.Choosed the AZO film as the transparent conductive anode of the solar cell can reduce the cost when the thickness was allowed.This research was of great significance to the development of cheap solar cells.
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